A Novel Single Gate Controlled Nonvolatile Floating Program Gate Reconfigurable FET,Advanced Theory and Simulations

当前位置： X-MOL 学术 › Adv. Theory Simul. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

A Novel Single Gate Controlled Nonvolatile Floating Program Gate Reconfigurable FET
Advanced Theory and Simulations ( IF 2.9 ) Pub Date : 2023-03-08 , DOI: 10.1002/adts.202200823
Xiaoshi Jin ₁ , Shouqiang Zhang ₁ , Meng Li ₁ , Xi Liu ₁

Affiliation

In this work, a single gate controlled nonvolatile floating program gate (FPG) reconfigurable field effect transistor (RFET) is proposed. Different from the traditional RFET, it introduces a nonvolatile charge storage layer as an FPG instead of a program gate that needs independent power supply. The stored charge in the FPG can be programmed by the control gate (CG). Therefore, the proposed FPG-RFET essentially requires only one independently powered gate to complete the reconfigurable operation. Moreover, the CG can regulate the equivalent voltage in the FPG, which can effectively reduce the static power consumption and the generation of reverse leakage current. The physical mechanism has also been analyzed in detail.

中文翻译：

一种新型单门控非易失性浮动程序门可重构 FET

在这项工作中，提出了一种单门控非易失性浮动程序门 (FPG) 可重构场效应晶体管 (RFET)。不同于传统的RFET，它引入了一个非易失性电荷存储层作为FPG，而不是需要独立供电的程序门。FPG 中存储的电荷可以通过控制门 (CG) 进行编程。因此，所提出的 FPG-RFET 本质上只需要一个独立供电的栅极即可完成可重构操作。而且CG可以调节FPG中的等效电压，可以有效降低静态功耗和反向漏电流的产生。还详细分析了物理机制。

更新日期：2023-03-08

点击分享查看原文

点击收藏

阅读更多本刊最新论文