This paper presented integrated electromigration (EM) studies through experiment, theory, and simulation. First, extensive EM tests were performed using Blech and standard wafer-level electromigration acceleration test (SWEAT)-like structures, which were fabricated on four-inch wafers. Second, a molecular dynamics (MD) simulation-based diffusion-induced strain was incorporated into the existing coupled theory. Third, one-dimensional (1D) governing equations in terms of atomic concentration for un-passivated and passivated configurations were derived for void formation and growth, using a modified Eshelby's solution to consider the effect of passivation. Fourth, a systematic approach was established, including theoretical formulations and experimental methods, to obtain key material properties, i.e., critical atomic concentration and diffusivity. We then determined the material's properties from a specific set of experimental data, using aluminium (Al) as a carrier for demonstration. These properties were then used to predict the time to failure and void growth under various conditions. The theoretical results agreed well with the experimental data. Moreover, we theoretically determined the critical threshold products of current density and conductor length for the un-passivated and passivated configurations, respectively. Both experiment and theory showed that, in the absence of mechanical stress in un-passivated configurations, the atomic self-diffusion, which was opposite to electron wind, was significant in resisting EM development. However, when mechanical stress was present, such as in passivated configurations, stress migration played a dominant role in resisting EM development. Our numerical results showed that the current density exponent n in Black's law remained as 2 in the range of the current density greater than 0.2 MA/cm² and rapidly approached infinity at a low level of current density.

本文介绍了通过实验、理论和模拟进行的综合电迁移 (EM) 研究。首先，使用 Blech 和类似标准晶圆级电迁移加速测试 (SWEAT) 的结构进行了广泛的 EM 测试，这些结构是在四英寸晶圆上制造的。其次，将基于分子动力学 (MD) 模拟的扩散诱导应变纳入现有耦合理论。第三，使用改进的 Eshelby 解决方案来考虑钝化的影响，针对空洞的形成和生长推导了未钝化和钝化配置的原子浓度方面的一维 (1D) 控制方程。第四，建立了一个系统的方法，包括理论公式和实验方法，以获得关键的材料特性，即，临界原子浓度和扩散系数。然后，我们根据一组特定的实验数据确定了材料的特性，使用铝 (Al) 作为载体进行演示。然后使用这些特性来预测各种条件下的失效时间和空隙增长。理论结果与实验数据吻合良好。此外，我们在理论上分别确定了未钝化和钝化配置的电流密度和导体长度的临界阈值乘积。实验和理论均表明，在未钝化配置中没有机械应力的情况下，与电子风相反的原子自扩散在抵抗电磁发展方面具有重要意义。然而，当存在机械应力时，例如在钝化配置中，应力迁移在抵抗 EM 发展中起着主导作用。我们的数值结果表明，电流密度指数布莱克定律中的n在大于0.2MA/cm ²的电流密度范围内保持为2 ，并在低电流密度水平下迅速接近无穷大。