The analytical physical modeling of undoped electrolyte gated organic field effect transistors (EGOFETs) in the Helmholtz approximation is presented. A compact analytical model for the current–voltage (I–V) characteristics, which includes the effects of the access series resistance, has been derived and validated by means of 2D finite element numerical calculations. The model describes all operating regimes continuously (subthreshold, linear, and saturation regimes), covers channel lengths down to a few micrometres and only includes physical device parameters. From the model, analytical expressions have been proposed for all the phenomenological parameters (e.g., capacitance, threshold voltage, sub-threshold slope voltage, and sub-threshold capacitance) appearing in the commonly used ideal FET model. The derived analytical physical model provides a simple and quantitative way to analyze the electrical characteristics of EGOFETs and EGOFET biosensors beyond the use of the oversimplified and phenomenological ideal FET model.

中文翻译：

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亥姆霍兹近似中电解质门控有机场效应晶体管的解析物理模型

介绍了亥姆霍兹近似中未掺杂电解质门控有机场效应晶体管 (EGOFET) 的分析物理模型。电流-电压 ( I – V) 特性，其中包括接入串联电阻的影响，已通过二维有限元数值计算得出和验证。该模型连续描述所有操作状态（亚阈值、线性和饱和状态），涵盖低至几微米的通道长度，并且仅包括物理设备参数。从该模型中，已经为常用的理想FET 模型中出现的所有现象学参数（例如，电容、阈值电压、亚阈值斜率电压和亚阈值电容）提出了解析表达式。派生的分析物理模型提供了一种简单和定量的方法来分析 EGOFET 和 EGOFET 生物传感器的电气特性，而不是使用过度简化和现象学的理想 FET 模型。