Energy Efficient Neuro-Inspired Phase–Change Memory Based on Ge4Sb6Te7 as a Novel Epitaxial Nanocomposite,Advanced Materials

当前位置： X-MOL 学术 › Adv. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Energy Efficient Neuro-Inspired Phase–Change Memory Based on Ge4Sb6Te7 as a Novel Epitaxial Nanocomposite
Advanced Materials ( IF 27.4 ) Pub Date : 2023-01-31 , DOI: 10.1002/adma.202300107
Asir Intisar Khan ₁ , Heshan Yu ₂ , Huairuo Zhang _{3,

4} , John R Goggin _{5,

6} , Heungdong Kwon ₇ , Xiangjin Wu ₁ , Christopher Perez ₇ , Kathryn M Neilson ₁ , Mehdi Asheghi ₇ , Kenneth E Goodson ₇ , Patrick M Vora _{5,

6} , Albert Davydov _{3,

6} , Ichiro Takeuchi ₂ , Eric Pop _{1,

8,

9}

Affiliation

Phase-change memory (PCM) is a promising candidate for neuro-inspired, data-intensive artificial intelligence applications, which relies on the physical attributes of PCM materials including gradual change of resistance states and multilevel operation with low resistance drift. However, achieving these attributes simultaneously remains a fundamental challenge for PCM materials such as Ge₂Sb₂Te₅, the most commonly used material. Here bi-directional gradual resistance changes with ≈10× resistance window using low energy pulses are demonstrated in nanoscale PCM devices based on Ge₄Sb₆Te₇, a new phase-change nanocomposite material . These devices show 13 resistance levels with low resistance drift for the first 8 levels, a resistance on/off ratio of ≈1000, and low variability. These attributes are enabled by the unique microstructural and electro-thermal properties of Ge₄Sb₆Te₇, a nanocomposite consisting of epitaxial SbTe nanoclusters within the Ge–Sb–Te matrix, and a higher crystallization but lower melting temperature than Ge₂Sb₂Te₅. These results advance the pathway toward energy-efficient analog computing using PCM.

中文翻译：

基于 Ge4Sb6Te7 作为新型外延纳米复合材料的节能神经启发相变存储器

相变存储器 (PCM) 是受神经启发的数据密集型人工智能应用的有希望的候选者，它依赖于 PCM 材料的物理属性，包括电阻状态的逐渐变化和低电阻漂移的多级操作。然而，同时实现这些属性对于 PCM 材料（例如最常用的材料Ge ₂ Sb ₂ Te _{5 ）来说仍然是一个基本挑战。}_{这里，在基于 Ge 4} Sb ₆ Te ₇（一种新型相变纳米复合材料）的纳米级 PCM 器件中，展示了使用低能量脉冲实现约 10× 电阻窗口的双向逐渐电阻变化。这些器件显示 13 个电阻级别，前 8 个级别的电阻漂移较低，电阻开/关比约为 1000，且可变性低。_{这些属性是由 Ge 4} Sb ₆ Te ₇独特的微观结构和电热性质实现的，Ge 4 Sb 6 Te 7 是一种由 Ge-Sb-Te 基体中的外延 SbTe 纳米团簇组成的纳米复合材料，并且比 Ge ₂ Sb ₂具有更高的结晶度和更低的熔化温度。特₅ . 这些结果推进了使用 PCM 实现节能模拟计算的道路。

更新日期：2023-01-31

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11