Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry†,Chemistry of Materials

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Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry†
Chemistry of Materials ( IF 7.2 ) Pub Date : 2023-01-31 , DOI: 10.1021/acs.chemmater.2c03379
Kun Yang ₁ , Se Hyun Kim ₁ , Hyun Woo Jeong ₁ , Dong Hyun Lee ₁ , Geun Hyeong Park ₁ , Younghwan Lee ₂ , Min Hyuk Park _{1,

2}

Affiliation

Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both academia and industry because of their superior scalability─in which their ferroelectric properties can be maintained even below 10 nm thickness─and excellent compatibility with current complementary metal–oxide–semiconductor technology. Regarding recent efforts to downscale the technology node of semiconductor processing, the emergence of ferroelectric properties in fluorite-structured oxide thin films at small length scales is of particular interest. As the length scale of the fluorite-structured oxide thin films reaches the atomic scale, the contribution of the interfacial layer to the properties naturally increases. In particular, the quality and type of interfacial layer, as well as the reaction chemistry in response to the electric field, play a major role in determining the properties of the devices. Consequently, understanding the chemistry of ferroelectric–electrode and ferroelectric–semiconductor interfaces is crucial for their use in industrial applications in the near future. In this context, emerging semiconductor devices based on fluorite-structured oxide ferroelectrics, including ferroelectric field-effect transistors, ferroelectric random-access memories, and ferroelectric tunnel junctions, and the impact of interface chemistry in the devices are reviewed in detail.

中文翻译：

对铁电器件的看法：界面化学的教训†

铁电萤石结构氧化物薄膜因其出色的可扩展性（即使厚度低于 10 纳米，铁电性能也能保持）以及与当前互补金属氧化物半导体技术的出色兼容性，引起了学术界和工业界的越来越多的兴趣。关于最近缩小半导体加工技术节点的努力，小尺寸萤石结构氧化物薄膜中铁电特性的出现特别令人感兴趣。随着萤石结构氧化物薄膜的长度尺度达到原子尺度，界面层对性能的贡献自然增加。特别是界面层的质量和类型，以及对电场的反应化学，在确定设备的属性方面起着重要作用。因此，了解铁电电极和铁电半导体界面的化学性质对于它们在不久的将来在工业应用中的使用至关重要。在此背景下，详细回顾了基于萤石结构氧化物铁电体的新兴半导体器件，包括铁电场效应晶体管、铁电随机存取存储器和铁电隧道结，以及界面化学对器件的影响。

更新日期：2023-01-31

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