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Rewritable Pressure-Driven n–p Conduction Switching in Marcasite-Type CrSb2
Chemistry of Materials ( IF 7.2 ) Pub Date : 2023-01-30 , DOI: 10.1021/acs.chemmater.2c03673 Chen Li 1, 2 , Ke Liu 2 , Shang Peng 2 , Qi Feng 2 , Dequan Jiang 1 , Ting Wen 2 , Hong Xiao 2 , Binbin Yue 2 , Yonggang Wang 1, 2
Chemistry of Materials ( IF 7.2 ) Pub Date : 2023-01-30 , DOI: 10.1021/acs.chemmater.2c03673 Chen Li 1, 2 , Ke Liu 2 , Shang Peng 2 , Qi Feng 2 , Dequan Jiang 1 , Ting Wen 2 , Hong Xiao 2 , Binbin Yue 2 , Yonggang Wang 1, 2
Affiliation
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Temperature- or pressure-driven n–p conduction-type switching has been described as an emerging phenomenon for potential applications as transistors, switches, and memory devices. The key challenge in the development of such n–p conduction-type switching materials is to establish maneuverable and controllable methods to achieve easy convertibility and nonvolatility. Herein, we report the first example of rewritable pressure and temperature dual-controlled n–p conduction-type switching in marcasite-type CrSb2. At room temperature, CrSb2 exhibits an unexcepted pressure-driven n–p conductivity-type switching around 12 GPa accompanied by a marcasite-to-arsenopyrite structural transition and a semiconductor-to-metal transition. The dramatic conduction-type switching is irreversible after pressure releasing at room temperature but reversible by annealing at a relatively low temperature (>80 °C). Accordingly, a multicycle bistability switching process is established under the dual regulation of both pressure and temperature. The underlying structure–property mechanism is revealed by in situ/ex situ characterization and analyses of the atomic-level microstructure, local lattice distortion, and residual stress induced by compression. This demonstration provides a new platform for the rational design of rewritable temperature/pressure-responsive photoelectric conversion devices.
中文翻译：
白铁矿型 CrSb2 中的可重写压力驱动 n-p 传导开关
温度或压力驱动的n - p传导型开关已被描述为晶体管、开关和存储设备等潜在应用的新兴现象。开发此类n - p导电型开关材料的关键挑战是建立可操作和可控的方法以实现易于转换和非挥发性。在此，我们报告了白铁矿型 CrSb 2中可重写压力和温度双控n - p传导型开关的第一个示例。在室温下，CrSb 2表现出异常的压力驱动n – p12 GPa 左右的电导率类型转换伴随着白铁矿到砷黄铁矿的结构转变和半导体到金属的转变。剧烈的传导型转换在室温下压力释放后是不可逆的，但通过在相对较低的温度 (>80 °C) 退火可逆。因此，在压力和温度的双重调节下建立了多循环双稳态转换过程。原位/非原位揭示了潜在的结构-特性机制表征和分析原子级微观结构、局部晶格畸变和压缩引起的残余应力。该演示为可重写温度/压力响应光电转换器件的合理设计提供了新的平台。
更新日期：2023-01-30
中文翻译：
白铁矿型 CrSb2 中的可重写压力驱动 n-p 传导开关
温度或压力驱动的n - p传导型开关已被描述为晶体管、开关和存储设备等潜在应用的新兴现象。开发此类n - p导电型开关材料的关键挑战是建立可操作和可控的方法以实现易于转换和非挥发性。在此，我们报告了白铁矿型 CrSb 2中可重写压力和温度双控n - p传导型开关的第一个示例。在室温下，CrSb 2表现出异常的压力驱动n – p12 GPa 左右的电导率类型转换伴随着白铁矿到砷黄铁矿的结构转变和半导体到金属的转变。剧烈的传导型转换在室温下压力释放后是不可逆的，但通过在相对较低的温度 (>80 °C) 退火可逆。因此，在压力和温度的双重调节下建立了多循环双稳态转换过程。原位/非原位揭示了潜在的结构-特性机制表征和分析原子级微观结构、局部晶格畸变和压缩引起的残余应力。该演示为可重写温度/压力响应光电转换器件的合理设计提供了新的平台。
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