Regulating Eu2+ Multisite Occupation through Structural Disorder toward Broadband Near-Infrared Emission,Chemistry of Materials

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Regulating Eu2+ Multisite Occupation through Structural Disorder toward Broadband Near-Infrared Emission
Chemistry of Materials ( IF 7.2 ) Pub Date : 2023-01-27 , DOI: 10.1021/acs.chemmater.2c03631
Yingze Zhu ₁ , Xuesong Wang ₂ , Jianwei Qiao ₁ , Maxim S. Molokeev _{3,

4,

5} , Hendrik C. Swart ₆ , Lixin Ning ₂ , Zhiguo Xia _{1,

7}

Affiliation

To promote the development of near-infrared (NIR) light sources in optoelectronic and biomedical applications, the discovery of NIR-emitting phosphor materials and their design principles are essential. Herein, we report a novel Eu²⁺-activated broadband NIR-emitting phosphor, BaSrGa₄O₈:Eu²⁺, which features multisite occupation due to Ba/Sr and oxygen site occupancy disorder. With an increase in the Ba/Sr atomic ratio from 1:1 to 1.7:0.3, the Eu²⁺ emission band maximum red-shifts from 670 to 775 nm, along with an enlargement of the full width at half-maximum (FWHM) from 140 to 230 nm. The underlying mechanism for the structure–property relationship is elucidated using density functional theory calculations. The application of the NIR phosphor-converted light-emitting diodes (pc-LEDs) is demonstrated, showing their potential in night-vision technology. Our results can initiate further exploitation of the host structural disorder toward Eu²⁺ broadband NIR luminescence for applications in pc-LEDs.

中文翻译：

通过对宽带近红外发射的结构紊乱调节 Eu2+ 多位点占据

为了促进近红外 (NIR) 光源在光电和生物医学应用中的发展，发现发射 NIR 的荧光粉材料及其设计原理至关重要。在此，我们报告了一种新型 Eu ²⁺激活的宽带 NIR 发光荧光粉 BaSrGa ₄ O ₈ :Eu ²⁺，由于 Ba/Sr 和氧位点占据紊乱，它具有多位点占据的特点。随着 Ba/Sr 原子比从 1:1 增加到 1.7:0.3，Eu ²⁺发射带最大红移从 670 nm 到 775 nm，同时半峰全宽 (FWHM) 从 140 nm 扩大到 230 nm。使用密度泛函理论计算阐明了结构-性质关系的潜在机制。演示了近红外荧光粉转换发光二极管 (pc-LED) 的应用，展示了它们在夜视技术中的潜力。我们的结果可以启动进一步利用主体结构紊乱以实现 Eu ²⁺宽带 NIR 发光，用于 pc-LED 中的应用。

更新日期：2023-01-27

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