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Half-Metallicity and Magnetic Anisotropy in Double-Perovskite GdBaCo2O6 Films Prepared via Topotactic Oxidation
Chemistry of Materials ( IF 7.2 ) Pub Date : 2023-01-18 , DOI: 10.1021/acs.chemmater.2c03335
Tsukasa Katayama 1, 2 , Shishin Mo 3 , Akira Chikamatsu 4 , Yuji Kurauchi 3 , Hiroshi Kumigashira 5 , Tetsuya Hasegawa 3
Affiliation  

Double-perovskite GdBaCo2Ox is a promising material owing to its fascinating electronic and magnetic features, such as spin crossover, charge and spin-state ordering, magnetic-field or photo-induced antiferromagnetic-to-ferromagnetic phase transition, and large magnetoresistance (MR). These properties can be controlled by changing the oxygen content (x), and an increase of x is effective for stabilizing ferromagnetic order. However, a stoichiometric phase (x = 6) has not yet been obtained because the distorted coordination geometry prefers oxygen vacancies. In this study, we report the successful synthesis of GdBaCo2O6 epitaxial films via the topotactic oxidation of a film with x = 5.5. The transformation between x = 5.5 and 6 phases was reversible via low-temperature redox reactions. The x = 6 film exhibited ferromagnetic and metallic behavior below the Curie temperature (TC) of 110 K and semiconducting behavior above TC. The spontaneous magnetization of the x = 6 film was 4.8 μB/f.u., which is the largest in the double-perovskite cobaltite system owing to the ferromagnetic interaction between Co3.5+ and Gd3+. It also exhibited strong magnetic anisotropy along the a axis (1.7 × 107 erg/cm3) and anisotropic MR behavior associated with the Gd/Ba ordering along the c axis. Furthermore, theoretical calculations predicted that the half-metallicity of the x = 6 film originates from the double exchange interaction between intermediate-spin Co3+ and low-spin Co4+.

中文翻译:

通过拓扑氧化制备的双钙钛矿 GdBaCo2O6 薄膜的半金属性和磁各向异性

双钙钛矿 GdBaCo 2 O x是一种很有前途的材料,因为它具有自旋交叉、电荷和自旋态有序、磁场或光致反铁磁到铁磁相变以及大磁阻等迷人的电子和磁性特性(先生)。这些性质可以通过改变氧含量 ( x ) 来控制,并且x的增加对于稳定铁磁有序是有效的。然而,尚未获得化学计量相 ( x = 6),因为扭曲的配位几何更喜欢氧空位。在这项研究中,我们报道了 GdBaCo 2 O 6的成功合成通过x = 5.5的薄膜的拓扑氧化形成外延薄膜。x = 5.5 和 6 相之间的转变通过低温氧化还原反应是可逆的。x = 6 的薄膜在110 K 的居里温度 ( T C ) 以下表现出铁磁和金属行为,在T C以上表现半导体行为。由于Co 3.5+和Gd 3+之间的铁磁相互作用, x = 6 薄膜的自发磁化强度为4.8 μ B /fu,这是双钙钛矿钴酸盐系统中最大的。它还沿 a 方向表现出强烈的磁各向异性轴 (1.7 × 10 7 erg/cm 3 ) 和与沿c轴的 Gd/Ba 排序相关的各向异性 MR 行为。此外,理论计算预测x =6薄膜的半金属性来源于中自旋Co 3+和低自旋Co 4+之间的双交换相互作用。
更新日期:2023-01-18
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