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Emerging MoS2 Wafer-Scale Technique for Integrated Circuits
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2023-01-18 , DOI: 10.1007/s40820-022-01010-4 Zimeng Ye 1 , Chao Tan 1 , Xiaolei Huang 2 , Yi Ouyang 3 , Lei Yang 1 , Zegao Wang 1 , Mingdong Dong 3
中文翻译：
新兴的集成电路晶圆级 MoS2 技术
更新日期：2023-01-18
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2023-01-18 , DOI: 10.1007/s40820-022-01010-4 Zimeng Ye 1 , Chao Tan 1 , Xiaolei Huang 2 , Yi Ouyang 3 , Lei Yang 1 , Zegao Wang 1 , Mingdong Dong 3
Affiliation
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This review summarized the state of the art of MoS2 from their controllable growth and potential application in integrated circuit.
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The influence of promoter, substrate, pressure, catalyst and precursor on the nucleation and growth are discussed.
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The current challenges and future perspectives of wafer-scale MoS2 are outlined from the materials and device applications.
中文翻译：
新兴的集成电路晶圆级 MoS2 技术
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这篇综述从 MoS 2的可控生长和在集成电路中的潜在应用总结了 MoS 2 的最新技术。
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讨论了促进剂、基质、压力、催化剂和前驱体对成核和生长的影响。
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从材料和器件应用方面概述了晶圆级MoS 2当前的挑战和未来前景。
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