Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.

中文翻译：

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用于负差分跨导电路应用的石墨烯桥异质结构器件。

基于二维范德华（2D vdW）材料的异质结构器件由于其异质结特性而在高端电子应用中得到了广泛研究。在这项研究中，我们展示了由横向串联双极半导体/Gr桥/n型二硫化钼组成的石墨烯（Gr）桥异质结构器件作为场效应晶体管（FET）的沟道材料。与传统的 FET 操作不同，我们的 Gr 桥器件表现出非经典传输特性（驼峰传输曲线），因此具有负差分跨导。这些现象被解释为两个串联 FET 的工作行为，它们是由 Gr 桥层的栅极可调接触电容造成的。使用具有窄带隙和宽带隙材料的双极半导体成功地演示了多值逻辑逆变器和三倍频电路作为基于非经典传输特性的更先进的电路应用。因此，我们相信，我们创新且简单的器件结构工程将成为未来二维纳米电子学多功能电路应用的一项有前途的技术。