Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for their prominent merits, such as quantum confinement effects, high photoluminescence quantum yield, and defect-tolerant structures. Additionally, ligand engineering and an all-inorganic composition lead to a robust platform for ambient-stable QD devices. This review presents the state-of-the-art research progress on inorganic perovskite QDs, emphasizing their electronic applications. In detail, the physical properties of inorganic perovskite QDs will be introduced first, followed by a discussion of synthesis methods and growth control. Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies.

近年来，金属卤化物钙钛矿因其非凡的物理性能和光伏性能而引起了极大的关注。其中，无机钙钛矿量子点（QD）以其突出的优点而脱颖而出，例如量子限制效应、高光致发光量子产率和容错结构。此外，配体工程和全无机组合物为环境稳定的量子点器件提供了一个强大的平台。这篇综述介绍了无机钙钛矿量子点的最新研究进展，强调了它们的电子应用。具体来说，首先介绍无机钙钛矿量子点的物理性质，然后讨论合成方法和生长控制。随后，将介绍无机钙钛矿量子点在电子器件（包括晶体管和存储器）中的新兴应用。最后，本综述将对推进无机钙钛矿量子点技术的潜在策略进行展望。