Nitrogenous Interlayers for ITO S/D Electrodes in N-Type Organic Thin Film Transistors,Advanced Materials Interfaces

当前位置： X-MOL 学术 › Adv. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Nitrogenous Interlayers for ITO S/D Electrodes in N-Type Organic Thin Film Transistors
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2022-12-09 , DOI: 10.1002/admi.202202059
Xin Rong ₁ , Jiangli Han ₁ , Chenhui Xu ₂ , Botai Ma ₁ , Lixian Jiang ₁ , Ding Ma ₁ , Rubo Xing ₃ , Liping Shen ₃ , Lian Duan _{1,

4} , Yunfeng Deng ₂ , Yanhou Geng ₂ , Guifang Dong _{1,

4}

Affiliation

The commercialization of organic thin film transistors (OTFTs) is partly hindered by the high cost and stubborn work function (WF) of common Au source/drain (S/D) electrodes. In this work, indium tin oxide (ITO) S/D electrodes modified with three different nitrogenous interlayers including 1,4-bis(2-hydroxyethyl) piperazine (HEP), polyethylenimine ethoxylated (PEIE), and branched polyethylenimine (PEI) are adopted to fabricate n-type OTFTs. The WF of bare ITO is 4.7 eV, whereas ITO modified with nitrogenous interlayers exhibits WFs ranging from 4.1 to 3.6 eV. By the first-principle calculation and element analysis, the protonated amines are critical for the reduction of ITO surface WF. Besides, the interlayers with higher nitrogen contents are more likely to improve the wettability of octadecyltrichlorosilane (OTS) modified ITO substrates, and help to gain the continuous and oriented poly[2,5-bis(4-tetradecyloctadecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-5,5′-di(thiophen-2-yl)-2,2′-(E)-1,2-bis(3,4-difluorothien-2-yl)-ethene] (P4FTVT-C32) semiconductor thin films. Therefore, P4FTVT-C32 based OTFTs with maximum electron field-effect mobility of 1.95 cm² V⁻¹ s⁻¹ are achieved by PEI treatments. These results indicate that the ITO S/D electrodes modified by nitrogenous interlayers can greatly slash costs and promote commercialization of OTFTs.

中文翻译：

N 型有机薄膜晶体管中 ITO S/D 电极的含氮中间层

有机薄膜晶体管 (OTFT) 的商业化在一定程度上受到了普通 Au 源/漏 (S/D) 电极的高成本和顽固功函数 (WF) 的阻碍。在这项工作中，氧化铟锡 (ITO) S/D 电极采用三种不同的含氮中间层改性，包括 1,4-双（2-羟乙基）哌嗪（HEP）、聚乙烯亚胺乙氧基化（PEIE）和支化聚乙烯亚胺（PEI）制造 n 型 OTFT。裸 ITO 的 WF 为 4.7 eV，而用含氮中间层改性的 ITO 的 WF 范围为 4.1 至 3.6 eV。通过第一性原理计算和元素分析，质子化胺对于降低 ITO 表面 WF 至关重要。此外，含氮量较高的中间层更有可能提高十八烷基三氯硅烷（OTS）改性ITO基板的润湿性，并有助于获得连续且定向的聚[2,5-双(4-十四烷基十八烷基)吡咯并[3,4-c]吡咯-1,4(2H,5H)-二酮-alt-5,5'-di( thiophen-2-yl)-2,2'-(E)-1,2-bis(3,4-difluorothien-2-yl)-ethene] (P4FTVT-C32) 半导体薄膜。因此，基于 P4FTVT-C32 的 OTFT 具有 1.95 cm 的最大场效应迁移率² V ^-1 s ^-1通过PEI处理实现。这些结果表明，通过含氮中间层修饰的 ITO S/D 电极可以大大降低成本并促进 OTFT 的商业化。

更新日期：2022-12-09

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11