Formamidinium lead iodide (FAPbI₃) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI₃ perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI₃, two-dimensional FA₂FA_n-1Pb_nI_3n+1, and three-dimensional α-FAPbI₃, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI₃-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.

甲脒碘化铅 (FAPbI ₃ ) 钙钛矿是有前途的近红外发光二极管发射体。然而，它们的性能仍然受到界面处缺陷辅助非辐射复合和带偏移引起的载波聚合的限制。在此，我们将几种带有乙酸盐或卤化物阴离子的镉盐引入到 FAPbI ₃钙钛矿前驱体中，以协同钝化材料缺陷并优化器件能带结构。特别是钙钛矿类似物，包含零维甲脒碘化镉、一维 δ-FAPbI ₃、二维 FA ₂ FA _n-1 Pb _n I _3n+1和三维 α-FAPbI₃ , 可一锅制得并在富含碘化甲脒的铅基钙钛矿薄膜中对能量传递起到举足轻重的积极作用。因此，基于近红外 FAPbI ₃的设备提供了 24.1% 的最大外部量子效率，同时显着提高了操作稳定性。结合我们在缺陷钝化和能量转移方面的发现，我们还通过发光和前所未有的自驱动检测设备双胞胎实现了近红外光通信。