Materials with photochromic (PC) and photo-stimulated luminescence (PSL) properties have been increasingly recognized as promising candidates in information storage and anti-counterfeiting applications. However, the general reported doping method cannot realize both PC and PSL properties in one inorganic material due to the unmanageable intrinsic electronic structure, which limits its applications in multi-mode information storage. Herein, we report a single phosphor with PC, PSL, thermal luminescence (TL), and afterglow properties to substitute the common composites utilized in multi-mode systems through the systematic defect management strategies. By doping Bi into LiNbO (LNO):Pr phosphor, it shows a fast response time (∼1 s) and a large reflectivity difference of 34 % between the bleached and colored states under 365 nm excitation. In addition, it also presents a wavelength-dependent bleaching character. The first-principle calculations reveal that such properties result from the presence of trap states in the band gap of LNO:Pr phosphor through Bi-doping, which enable us to design the device with multiple dimensions of anti-counterfeiting and optical information storage performances. This finding stimulates the exploration for designing multi-mode responsive luminophores for future generation of information storage.

中文翻译：

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双诱导光致变色和光激发发光，具有快速光致变色响应，用于多模式动态防伪和光学信息存储


具有光致变色（PC）和光刺激发光（PSL）特性的材料越来越被认为是信息存储和防伪应用中最有前途的候选材料。然而，由于难以控制的固有电子结构，一般报道的掺杂方法无法在一种无机材料中同时实现PC和PSL特性，这限制了其在多模式信息存储中的应用。在此，我们报告了一种具有 PC、PSL、热发光 (TL) 和余辉特性的单一荧光粉，通过系统的缺陷管理策略来替代多模式系统中使用的常见复合材料。通过将 Bi 掺杂到 LiNbO (LNO):Pr 荧光粉中，它在 365 nm 激发下表现出快速响应时间 (∼1 s) 和漂白态与着色态之间 34% 的反射率差异。此外，它还呈现出与波长相关的漂白特性。第一性原理计算表明，这种特性是通过Bi掺杂在LNO:Pr荧光粉带隙中存在陷阱态造成的，这使我们能够设计出具有多维度防伪和光学信息存储性能的器件。这一发现激发了对设计用于下一代信息存储的多模式响应发光体的探索。