Fast, Multi-Bit, and Vis-Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2/2D-Perovskite Van der Waals Heterojunction,Advanced Materials

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Fast, Multi-Bit, and Vis-Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2/2D-Perovskite Van der Waals Heterojunction
Advanced Materials ( IF 27.4 ) Pub Date : 2022-12-01 , DOI: 10.1002/adma.202208664
Haojie Lai ₁ , Zhengli Lu ₁ , Yueheng Lu ₁ , Xuanchun Yao ₂ , Xin Xu ₁ , Jian Chen ₂ , Yang Zhou ₁ , Pengyi Liu ₁ , Tingting Shi ₁ , Xiaomu Wang ₃ , Weiguang Xie _{1,

4}

Affiliation

Nonvolatile optoelectronic memory (NVOM) integrating the functions of optical sensing and long-term memory can efficiently process and store a large amount of visual scene information, which has become the core requirement of multiple intelligence scenarios. However, realizing NVOM with vis-infrared broadband response is still challenging. Herein, the room temperature vis-infrared broadband NVOM based on few-layer MoS₂/2D Ruddlesden–Popper perovskite (2D-RPP) van der Waals heterojunction is realized. It is found that the 2D-RPP converts the initial n-type MoS₂ into p-type and facilitates hole transfer between them. Furthermore, the 2D-RPP rich in interband states serves as an effective electron trapping layer as well as broadband photoresponsive layer. As a result, the dielectric-free MoS₂/2D-RPP heterojunction enables the charge to transfer quickly under external field, which enables a large memory window (104 V), fast write speed of 20 µs, and optical programmable characteristics from visible light (405 nm) to telecommunication wavelengths (i.e., 1550 nm) at room temperature. Trapezoidal optical programming can produce up to 100 recognizable states (>6 bits), with operating energy as low as 5.1 pJ per optical program. These results provide a route to realize fast, low power, multi-bit optoelectronic memory from visible to the infrared wavelength.

中文翻译：

具有 MoS2/2D-钙钛矿范德瓦尔斯异质结的快速、多位和可见红外宽带非易失性光电存储器

集成光学传感和长时记忆功能的非易失性光电存储器（NVOM），能够高效处理和存储大量的视觉场景信息，成为多元智能场景的核心需求。然而，实现具有可见红外宽带响应的 NVOM 仍然具有挑战性。_{在此，实现了基于少层 MoS 2} /2D Ruddlesden-Popper 钙钛矿 (2D-RPP) 范德瓦尔斯异质结的室温可见红外宽带 NVOM 。结果发现，2D-RPP 将初始的 n 型 MoS ₂成p型并促进它们之间的空穴转移。此外，富含带间态的 2D-RPP 可作为有效的电子捕获层和宽带光响应层。因此，无电介质的 MoS ₂ /2D-RPP 异质结使电荷能够在外场下快速转移，从而实现大存储窗口 (104 V)、20 µs 的快速写入速度以及可见光的光学可编程特性(405 nm) 到室温下的电信波长（即 1550 nm）。梯形光学编程可以产生多达 100 个可识别状态（>6 位），每个光学程序的运行能量低至 5.1 pJ。这些结果为实现从可见光到红外波长的快速、低功耗、多位光电存储器提供了途径。

更新日期：2022-12-01

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