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Nonvolatile Logic and Ternary Content-Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022)
Advanced Materials ( IF 27.4 ) Pub Date : 2022-12-01 , DOI: 10.1002/adma.202270335 Xiong Xiong 1 , Jiyang Kang 2 , Shiyuan Liu 1 , Anyu Tong 1 , Tianyue Fu 1 , Xuefei Li 2 , Ru Huang 1, 3 , Yanqing Wu 1, 2, 3
Advanced Materials ( IF 27.4 ) Pub Date : 2022-12-01 , DOI: 10.1002/adma.202270335 Xiong Xiong 1 , Jiyang Kang 2 , Shiyuan Liu 1 , Anyu Tong 1 , Tianyue Fu 1 , Xuefei Li 2 , Ru Huang 1, 3 , Yanqing Wu 1, 2, 3
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Memory Cells
中文翻译：
基于互补黑磷和二硫化铼晶体管的非易失性逻辑和三态内容可寻址存储器（Adv. Mater. 48/2022）
记忆细胞
更新日期：2022-12-01
中文翻译：
基于互补黑磷和二硫化铼晶体管的非易失性逻辑和三态内容可寻址存储器（Adv. Mater. 48/2022）
记忆细胞
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