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Targeted Design of Surface Configuration on CsPbI3 Perovskite Nanocrystals for High-Efficiency Photovoltaics
ACS Energy Letters ( IF 19.3 ) Pub Date : 2022-11-30 , DOI: 10.1021/acsenergylett.2c02453
Lin Yuan 1, 2 , Xiang Sun 1, 2 , Xuliang Zhang 1 , Fangchao Li 1 , Yang Liu 1 , Yiyuan Gao 1 , Hongqiang Qian 3 , Zeke Liu 1, 2 , Wanli Ma 1, 2
Affiliation  

The advanced optoelectronic properties of the emerging halide perovskite nanocrystals (PNCs) have brought forth new opportunities for photovoltaic applications. However, their dynamic ligand binding and fragile crystal structure make the conventional NC surface manipulation strategies inaccessible. It is urgent to specially design the surface configuration of PNCs for high-efficiency photovoltaics. Herein, we develop the synthesis of CsPbI3 PNCs with a guanidinium (GA)-anchored surface based on a vacancy-suppressed ternary-precursor method. The hydrogen bond between GA+ and surrounding iodine can reinforce the PNC surface and improve surface passivation. Furthermore, the short GA+ can ensure high interdot coupling in the PNC film. Therefore, the obtained PNC film can realize both a low trap density and high carrier mobility. Consequently, a champion power conversion efficiency (PCE) of 15.83% can be achieved. In addition, the production yield of our method is significantly higher than that of the conventional method, which makes the synthesis protocol more suitable for future scalable manufacturing.

中文翻译:

用于高效光伏的 CsPbI3 钙钛矿纳米晶体表面结构的靶向设计

新兴的卤化物钙钛矿纳米晶体 (PNC) 的先进光电特性为光伏应用带来了新的机遇。然而,它们的动态配体结合和脆弱的晶体结构使得传统的 NC 表面操作策略难以实现。迫切需要专门设计用于高效光伏的 PNC 表面配置。在此,我们开发了基于空位抑制三元前驱体方法合成具有胍 (GA) 锚定表面的 CsPbI 3 PNC。GA +与周围碘之间的氢键可以增强PNC表面并改善表面钝化。此外,短 GA +可以确保 PNC 薄膜中的高点间耦合。因此,所获得的PNC薄膜可以同时实现低陷阱密度和高载流子迁移率。因此,可以实现 15.83% 的冠军功率转换效率 (PCE)。此外,我们方法的产量明显高于传统方法,这使得合成方案更适合未来的可扩展制造。
更新日期:2022-11-30
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