We present the effect of doping with In, V, and Cl on the values of resistivity (ρ) and mobility-lifetime (μτ) in (Cd,Mn)Te crystals grown by the Bridgman method and with diameters of 2 or 3 in. This material is investigated to use in room-temperature X-ray and gamma-ray detectors. We carried out post-growth annealing processes in cadmium vapors at 500 °C to obtain more homogeneous crystal properties. The EU-ρ-μτ-SCAN machine, which uses the principle of time-dependent charge measurement, allowed us to map the values of resistivity and mobility-lifetime in crystal plates. High values of those two quantities are crucial in nuclear detector applications. Crystals doped with In show inhomogeneous properties, which makes the fabrication of competitive large-area crystals more difficult. Low-temperature post-growth annealing in Cd vapors is insufficient for (Cd,Mn)Te:In crystals, where the decrease of ρ and μτ values is observed. Such annealing works for (Cd,Mn)Te:V crystals, where the mean values of ρ and μτ do not change significantly, but their distributions are more uniform. Both dopants, vanadium and indium, used together with an excess of Te, effectively increased ρ and μτ. Using the ⁵⁷Co source, the spectroscopic performance of each pixel of the detector co-doped with In and V was shown.

我们展示了掺杂 In、V 和 Cl 对通过布里奇曼法生长的直径为 2 英寸或 3 英寸的 (Cd,Mn)Te 晶体的电阻率 (ρ) 和迁移率寿命 (μτ) 值的影响。该材料被研究用于室温 X 射线和伽马射线探测器。我们在 500 °C 的镉蒸气中进行了生长后退火工艺，以获得更均匀的晶体特性。EU-ρ-μτ-SCAN 机器使用随时间变化的电荷测量原理，使我们能够绘制晶体板中电阻率和迁移率-寿命的值。这两个量的高值在核探测器应用中至关重要。掺杂 In 的晶体表现出不均匀的特性，这使得具有竞争力的大面积晶体的制造更加困难。Cd 蒸汽中的低温生长后退火对于 (Cd,Mn)Te:In 晶体来说是不够的，其中观察到 ρ 和 μτ 值的降低。这种退火适用于 (Cd,Mn)Te:V 晶体，其中 ρ 和 μτ 的平均值没有显着变化，但它们的分布更均匀。钒和铟这两种掺杂剂与过量的 Te 一起使用，有效地增加了 ρ 和 μτ。使用⁵⁷ Co源，显示了共掺杂In和V的探测器每个像素的光谱性能。