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Nanoscale Electric Field Probing in a Single Nanowire with Raman Spectroscopy and Elastic Strain
Nano Letters ( IF 9.6 ) Pub Date : 2022-11-30 , DOI: 10.1021/acs.nanolett.2c03637
Vladislav A Sharov 1, 2 , Alexey M Mozharov 3 , Vladimir V Fedorov 1, 4 , Andrey Bogdanov 5, 6 , Prokhor A Alekseev 2 , Ivan S Mukhin 1, 3, 4
Affiliation  

In this work we investigate the Raman response of extremely strained gallium phosphide nanowires. We analyze new strain-induced spectral phenomena such as 2-fold and 3-fold phonon peak splitting which arise due to nontrivial internal electric field distribution coupled with inhomogeneous strain. We show that high bending strain acts as a probe allowing us to define the electric field distribution with deep subwavelength resolution using the corresponding changes of the Raman spectra. We investigate the nature of the localization with respect to nanowire diameter, excitation spot position, and light polarization, supporting the experiment with 3D numerical modeling. Based on our findings we propose a research tool allowing to precisely localize the electric field in a certain subwavelength region of the nanophotonic resonator.

中文翻译:

用拉曼光谱和弹性应变探测单根纳米线中的纳米级电场

在这项工作中,我们研究了极度应变的磷化镓纳米线的拉曼响应。我们分析了新的应变诱导光谱现象,例如由于非平凡的内部电场分布和非均匀应变而产生的 2 倍和 3 倍声子峰分裂。我们表明,高弯曲应变充当探针,使我们能够使用拉曼光谱的相应变化来定义具有深亚波长分辨率的电场分布。我们研究了关于纳米线直径、激发点位置和光偏振的定位性质,支持 3D 数值建模实验。根据我们的发现,我们提出了一种研究工具,可以精确定位纳米光子谐振器某个亚波长区域内的电场。
更新日期:2022-11-30
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