Realization of a piezoelectric quantum spin Hall phase with a large band gap in MBiH (M = Ga and In) monolayers,Journal of Materials Chemistry A

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Realization of a piezoelectric quantum spin Hall phase with a large band gap in MBiH (M = Ga and In) monolayers
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2022-11-30 , DOI: 10.1039/d2ta04206a
Y. H. Wang ₁ , S. Y. Lei ₁ , F. Xu ₁ , J. Chen ₁ , N. Wan ₁ , Q. A. Huang ₁ , L. T. Sun ₁

Affiliation

Piezoelectric quantum spin Hall insulators (PQSHIs), as a nascent field, can realize the coexistence of QSH states and piezoelectricity. However, diminutive topological band gap is the dominant obstacle to its practical applications. In order to solve this predicament, we design a new family of two-dimensional (2D) materials MBiH (M = Ga and In) monolayers and predict them to be intrinsic PQSHIs with largest QSH bandgap up to 0.735 eV. In addition, MBiH exhibits considerable piezoelectricity strain coefficients of 4.163 pm V⁻¹ and 5.415 pm V⁻¹ for GaBiH and InBiH, respectively, which are comparable to and even exceed those of many well-known piezoelectric materials, for example, α-quartz (d₁₁ = 2.31 pm V⁻¹) and MoS₂ (d₁₁ = 3.73 pm V⁻¹). Our results indicate that MBiH (M = Ga and In) has potential applications in low-power piezoelectric devices.

中文翻译：

在 MBiH（M = Ga 和 In）单层中实现具有大带隙的压电量子自旋霍尔相

压电量子自旋霍尔绝缘体（PQSHIs）作为新兴领域，可以实现QSH态与压电性的共存。然而，小的拓扑带隙是其实际应用的主要障碍。为了解决这一困境，我们设计了一个新的二维 (2D) 材料系列 MBiH（M = Ga 和 In）单层，并预测它们是最大 QSH 带隙高达 0.735 eV 的本征 PQSHI。此外，对于 GaBiH 和 InBiH，MBiH 表现出相当大的压电应变系数，分别为 4.163 pm V ^-1和5.415 pm V ^-1，可与甚至超过许多众所周知的压电材料，例如 α-石英( d ₁₁ = 2.31 pm V ⁻¹ ) 和 MoS₂ ( d ₁₁ = 3.73 pm V^-1 )。我们的结果表明 MBiH（M = Ga 和 In）在低功率压电器件中具有潜在的应用。

更新日期：2022-11-30

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