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New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors
Nano Letters ( IF 9.6 ) Pub Date : 2022-11-29 , DOI: 10.1021/acs.nanolett.2c04013 Mingxu Wang 1 , Xinming Zhuang 1 , Fengjing Liu 1 , Yang Chen 2 , Zixu Sa 1 , Yanxue Yin 1 , Zengtao Lv 1, 3 , Haoming Wei 2 , Kepeng Song 1 , Bingqiang Cao 2, 4 , Zai-Xing Yang 1
Nano Letters ( IF 9.6 ) Pub Date : 2022-11-29 , DOI: 10.1021/acs.nanolett.2c04013 Mingxu Wang 1 , Xinming Zhuang 1 , Fengjing Liu 1 , Yang Chen 2 , Zixu Sa 1 , Yanxue Yin 1 , Zengtao Lv 1, 3 , Haoming Wei 2 , Kepeng Song 1 , Bingqiang Cao 2, 4 , Zai-Xing Yang 1
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Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.61 V ± 0.29 V and an extremely low power consumption of 7.06 pW. When the as-constructed NW SGT is used as a photodetector, the maximum value of the power consumption is as low as 11.96 nW, which is far below that of the reported phototransistors working in the saturated region. Furthermore, benefiting from the adopted SGT device, the photodetector shows a high photovoltage of 6.6 × 10–1 V, a responsivity of 7.86 × 1012 V W–1, and a detectivity of 5.87 × 1013 Jones. Obviously, the low power consumption and excellent responsivity and detectivity enabled by NW SGT promise a new approach to next-generation, high-performance photodetection technology.
中文翻译：
由纳米线源极门控晶体管实现的低功耗、高性能光电探测器的新方法
功耗使下一代大规模光电探测具有挑战性。在这项工作中，源门控晶体管（SGT）首先被用作光电探测器，展示了预期的低功耗和高光电探测性能。SGT 由功能性富硫带壳 GeS 纳米线 (NW) 和低功能金属构成，具有 0.61 V ± 0.29 V 的低饱和电压和 7.06 pW 的极低功耗。当构建的 NW SGT 用作光电探测器时，功耗的最大值低至 11.96 nW，远低于报道的工作在饱和区的光电晶体管的功耗。此外，得益于采用的 SGT 器件，光电探测器显示出 6.6 × 10 –1 V 的高光电压，响应率为 7.86 × 1012 VW –1，侦测率为 5.87 × 10 13琼斯。显然，NW SGT 实现的低功耗和出色的响应度和探测能力为下一代高性能光电探测技术开辟了一条新途径。
更新日期：2022-11-29
中文翻译：
由纳米线源极门控晶体管实现的低功耗、高性能光电探测器的新方法
功耗使下一代大规模光电探测具有挑战性。在这项工作中，源门控晶体管（SGT）首先被用作光电探测器，展示了预期的低功耗和高光电探测性能。SGT 由功能性富硫带壳 GeS 纳米线 (NW) 和低功能金属构成，具有 0.61 V ± 0.29 V 的低饱和电压和 7.06 pW 的极低功耗。当构建的 NW SGT 用作光电探测器时，功耗的最大值低至 11.96 nW，远低于报道的工作在饱和区的光电晶体管的功耗。此外，得益于采用的 SGT 器件，光电探测器显示出 6.6 × 10 –1 V 的高光电压，响应率为 7.86 × 1012 VW –1，侦测率为 5.87 × 10 13琼斯。显然，NW SGT 实现的低功耗和出色的响应度和探测能力为下一代高性能光电探测技术开辟了一条新途径。
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