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Deciphering the photophysical properties of near-infrared quantum emitters in AlGaN films by transition dynamics
Nanoscale ( IF 5.8 ) Pub Date : 2022-11-23 , DOI: 10.1039/d2nr04978c Yingxian Xue 1 , Junxiao Yuan 2, 3 , Qian Li 2 , Feiliang Chen 4 , Xinrui Yuan 1 , Zhiping Ju 1 , Shiyu Zhang 1 , Botao Wu 1 , Yidong Hou 3 , Mo Li 4 , Jian Zhang 4 , E Wu 1, 5, 6
Nanoscale ( IF 5.8 ) Pub Date : 2022-11-23 , DOI: 10.1039/d2nr04978c Yingxian Xue 1 , Junxiao Yuan 2, 3 , Qian Li 2 , Feiliang Chen 4 , Xinrui Yuan 1 , Zhiping Ju 1 , Shiyu Zhang 1 , Botao Wu 1 , Yidong Hou 3 , Mo Li 4 , Jian Zhang 4 , E Wu 1, 5, 6
Affiliation
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Point defects in wide bandgap III-nitride semiconductors have been recently reported to be one kind of the most promising near-infrared (NIR) quantum emitters operating at room temperature (RT). But the identification of the point defect species and the energy level structures as well as the transition dynamics remain unclear. Here, the photophysical properties of single-photon emission from point defects in AlGaN films are investigated in detail. According to the first-principles calculations, a three-level model was established to explain the transition dynamics of the quantum emitters. An anti-site nitrogen vacancy complex (VNNGa) was demonstrated to be the most likely origin of the measured emitter since the calculated zero-phonon line (ZPL) and the lifetime of VNNGa in the AlGaN film coincide well with the experimental results. Our results provide new insights into the optical properties and energy level structures of quantum emission from point defects in AlGaN films at RT and establish the foundation for future AlGaN-based on-chip quantum technologies.
中文翻译：
通过跃迁动力学破译 AlGaN 薄膜中近红外量子发射器的光物理特性
最近报道，宽带隙 III 族氮化物半导体中的点缺陷是一种在室温 (RT) 下工作的最有前途的近红外 (NIR) 量子发射器。但是点缺陷种类和能级结构以及跃迁动力学的识别仍然不清楚。在这里，详细研究了 AlGaN 薄膜中点缺陷的单光子发射的光物理特性。根据第一性原理计算，建立了一个三能级模型来解释量子发射体的跃迁动力学。自计算的零声子线 (ZPL) 和 V N的寿命以来，反位氮空位复合体 (V N N Ga ) 被证明是测量发射体最可能的来源AlGaN薄膜中的N Ga与实验结果吻合很好。我们的研究结果为 RT 下 AlGaN 薄膜中点缺陷的量子发射的光学特性和能级结构提供了新的见解，并为未来基于 AlGaN 的片上量子技术奠定了基础。
更新日期：2022-11-23
中文翻译：
通过跃迁动力学破译 AlGaN 薄膜中近红外量子发射器的光物理特性
最近报道，宽带隙 III 族氮化物半导体中的点缺陷是一种在室温 (RT) 下工作的最有前途的近红外 (NIR) 量子发射器。但是点缺陷种类和能级结构以及跃迁动力学的识别仍然不清楚。在这里，详细研究了 AlGaN 薄膜中点缺陷的单光子发射的光物理特性。根据第一性原理计算，建立了一个三能级模型来解释量子发射体的跃迁动力学。自计算的零声子线 (ZPL) 和 V N的寿命以来，反位氮空位复合体 (V N N Ga ) 被证明是测量发射体最可能的来源AlGaN薄膜中的N Ga与实验结果吻合很好。我们的研究结果为 RT 下 AlGaN 薄膜中点缺陷的量子发射的光学特性和能级结构提供了新的见解，并为未来基于 AlGaN 的片上量子技术奠定了基础。
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