Two-dimensional tungsten diselenide (WSe₂) has received intense interest as a multifunctional semiconducting material for its distinctive electronic structure, outstanding photonic and catalytic properties. In particular, the dark exciton emission of WSe₂, which is enhanced with increasing temperature, makes it extremely promising for room-temperature optoelectronic devices with bright emissions. By manipulating the lateral dimensions of WSe₂ to form quantum dots (QDs) thus controlling their electronic band gaps via quantum confinement effect, a broad range of emission wavelengths can be achieved and the band edge positions are optimized for electro/photocatalytic water splitting. Further developing this technology requires us to understand the fundamental mechanisms and limitations behind different synthesis techniques to control the size, morphology, and quality of the WSe₂ QDs. Hereby, we review the recent progress in state-of-the-art synthesis techniques of WSe₂ QDs and their applications. A new theoretical insight correlating the down-sizing limit of WSe₂ QDs with different synthesis conditions is developed for guiding the synthesis of QDs with optimal sizes. From here, we review the fundamental science underpinning the exotic physical and chemical properties of WSe₂ QDs and how they are correlated with the QD sizes and morphologies. Finally, we highlight the critical challenges towards high-throughput production of high-quality, homogeneous WSe₂ QDs and their potential applications.

二维二硒化钨(WSe ₂ )作为一种多功能半导体材料，因其独特的电子结构、出色的光子和催化性能而受到广泛关注。特别地，WSe ₂的暗激子发射随着温度的升高而增强，这使得它非常有希望用于具有明亮发射的室温光电器件。通过操纵 WSe _{2的横向尺寸}为了形成量子点 (QD)，从而通过量子限制效应控制其电子带隙，可以实现广泛的发射波长范围，并且针对电/光催化水分解优化了带边缘位置。进一步开发这项技术需要我们了解不同合成技术背后的基本机制和局限性，以控制 WSe ₂ QD 的尺寸、形态和质量。在此，我们回顾了最先进的 WSe ₂量子点合成技术及其应用的最新进展。关联 WSe _{2尺寸缩小极限的新理论见解}开发了具有不同合成条件的 QD，以指导合成具有最佳尺寸的 QD。_{从这里开始，我们回顾了支持 WSe 2}量子点奇特物理和化学性质的基础科学，以及它们如何与量子点尺寸和形态相关联。最后，我们强调了高通量生产高质量、均匀的 WSe ₂ QD 及其潜在应用的关键挑战。