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Impact of Negative Thermal Expansion on Thermal Quenching of Luminescence of Sc2Mo3O12:Eu3+
Chemistry of Materials ( IF 7.2 ) Pub Date : 2022-11-15 , DOI: 10.1021/acs.chemmater.2c02609
Forough Jahanbazi 1 , Yuanbing Mao 1
Affiliation  

Thermal quenching (TQ) is a major challenge facing many phosphors, especially those used in the high-temperature range. To overcome this obstacle, here we present a new phenomenon of excitation-wavelength-dependent antithermal quenching (anti-TQ) luminescence over a broad temperature range. We have observed that the luminescence intensity of Eu3+-doped Sc2Mo3O12 almost triples at elevated temperatures along with intensified energy transfer from the host to the dopant upon excitation at the charge-transfer band of 277 nm. Specifically, the absolute emission intensity of Sc2Mo3O12:20%Eu3+ measured at 398 and 798 K reaches 292% and 97% of its initial intensity taken at 298 K, respectively. Similar to the photoluminescence emission intensity, the lifetime also elongates upon heating with a maximum value at 623 K. We have unveiled the mechanism of the excitation-wavelength-dependent anti-TQ luminescence, which is attributed to the promoted energy transfer induced by the negative thermal expansion (NTE) property of the Sc2Mo3O12 host. Moreover, we have demonstrated the efficient high-temperature luminescence thermometric performance of this anti-TQ luminescence phosphor using its temperature-dependent lifetime. The new phenomenon and experimental findings presented in this study provide inspiration for the future exploration of NTE-based phosphors with thermally enhanced luminescence performance via their intensified energy transfer for broad potential applications.

中文翻译:

负热膨胀对Sc2Mo3O12:Eu3+发光热猝灭的影响

热淬火 (TQ) 是许多荧光粉面临的主要挑战,尤其是那些在高温范围内使用的荧光粉。为了克服这一障碍,我们在这里提出了一种在很宽的温度范围内激发波长相关的抗热猝灭 (anti-TQ) 发光的新现象。我们已经观察到,在 277 nm 的电荷转移带激发时,Eu 3+掺杂的 Sc 2 Mo 3 O 12的发光强度在高温下几乎增加了三倍,同时从主体到掺杂剂的能量转移增强。具体来说,Sc 2 Mo 3 O 12 :20%Eu 3+的绝对发射强度在 398 和 798 K 下测得的光强度分别达到其在 298 K 下的初始强度的 292% 和 97%。与光致发光发射强度相似,加热后寿命也延长,最大值为 623 K。我们揭示了激发波长依赖性抗 TQ 发光的机制,这归因于负能量转移引起的能量转移Sc 2 Mo 3 O 12的热膨胀(NTE)特性主持人。此外,我们还利用其温度依赖性寿命证明了这种抗 TQ 发光荧光粉的高效高温发光测温性能。本研究中提出的新现象和实验结果为未来探索基于 NTE 的荧光粉提供了灵感,这些荧光粉通过强化能量转移具有热增强的发光性能,具有广泛的潜在应用。
更新日期:2022-11-15
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