Gas-phase grafting for the multifunctional surface modification of silicon quantum dots,Nanoscale

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Gas-phase grafting for the multifunctional surface modification of silicon quantum dots
Nanoscale ( IF 5.8 ) Pub Date : 2022-11-14 , DOI: 10.1039/d2nr04902c
Joseph Schwan ₁ , Kefu Wang _{2,

3} , Ming Lee Tang _{2,

3} , Lorenzo Mangolini _{1,

3}

Affiliation

Photon upconversion in systems incorporating inorganic quantum dots (QDs) is of great interest for applications in solar energy conversion, bioimaging, and photodynamic therapy. Achieving high up-conversion efficiency requires not only high-quality inorganic nanoparticles, but also precise control of their surface functional groups. Gas-phase surface functionalization provides a new pathway towards controlling the surface of small inorganic nanoparticles. In this contribution, we utilize a one-step low-temperature plasma technique for the synthesis and in-flight partial functionalization of silicon QDs with alkyl chains. The partially functionalized surface is then modified further with 9-vinylanthracene via thermal hydrosilylation resulting in the grafting of 9-ethylanthracene (9EA) groups. We have found that the minimum alkyl ligand density necessary for quantum dot solubility also gives the maximum upconversion quantum yield, reaching 17% for silicon QDs with Si-dodecyl chains and an average of 3 9EA molecules per particle.

中文翻译：

气相接枝用于硅量子点的多功能表面修饰

包含无机量子点 (QD) 的系统中的光子上转换对于太阳能转换、生物成像和光动力疗法中的应用具有重要意义。实现高上转换效率不仅需要高质量的无机纳米粒子，还需要精确控制其表面官能团。气相表面功能化为控制小无机纳米粒子的表面提供了一条新途径。在这项贡献中，我们利用一步低温等离子体技术来合成和飞行中具有烷基链的硅量子点的部分功能化。然后通过 9-乙烯基蒽进一步修饰部分功能化的表面热氢化硅烷化导致 9-乙基蒽 (9EA) 基团的接枝。我们发现，量子点溶解度所需的最小烷基配体密度也提供了最大的上转换量子产率，对于具有 Si-十二烷基链的硅量子点和平均每个粒子 3 个 9EA 分子，达到 17%。

更新日期：2022-11-16

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