Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon,ACS Photonics

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Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon
ACS Photonics ( IF 6.5 ) Pub Date : 2022-11-08 , DOI: 10.1021/acsphotonics.2c00711
Taojie Zhou _{1,

2} , Jingwen Ma ₃ , Mingchu Tang ₂ , Haochuan Li ₁ , Mickael Martin ₄ , Thierry Baron ₄ , Huiyun Liu ₂ , Siming Chen ₂ , Xiankai Sun ₃ , Zhaoyu Zhang _{1,

5}

Affiliation

Monolithic integration of energy-efficient and ultracompact light sources on an industry-standard Si platform has emerged as a promising technology to realize fully integrated Si-based photonic integrated circuits. Recently, semiconductor topological lasers using topologically protected defect modes have received extensive investigation, owing to their unique merits, including robustness against structural imperfections and disorders. However, due to the significant material dissimilarities between Si and III–V materials, previous demonstrations of semiconductor topological lasers have been limited to their native substrates. Here, we experimentally report ultralow threshold, continuous-wave, optically pumped, single-mode, InAs/GaAs quantum dot, topological corner state nanolasers monolithically integrated on a CMOS-compatible Si (001) substrate. Our results represent a new route toward ultracompact and high-performance integrated nanoscale light sources for Si photonics and enable promising applications for topological photonics.

中文翻译：

硅上单片集成超低阈值拓扑角态纳米激光器

在行业标准 Si 平台上单片集成节能和超紧凑光源已成为实现全集成 Si 基光子集成电路的有前途的技术。最近，由于其独特的优点，包括对结构缺陷和紊乱的鲁棒性，使用拓扑保护缺陷模式的半导体拓扑激光器受到了广泛的研究。然而，由于 Si 和 III-V 材料之间存在显着的材料差异，先前的半导体拓扑激光器演示仅限于其原生基板。在这里，我们通过实验报告单片集成在 CMOS 兼容 Si (001) 衬底上的超低阈值、连续波、光泵浦、单模、InAs/GaAs 量子点、拓扑角态纳米激光器。

更新日期：2022-11-08

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