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Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2022-11-04 , DOI: 10.1007/s40820-022-00970-x Dong Seob Chung 1 , Tyler Davidson-Hall 1 , Giovanni Cotella 2 , Quan Lyu 2 , Peter Chun 3 , Hany Aziz 1
中文翻译:
通过在 ZnO 电子传输层中掺入氟来减少界面电荷积累,从而显着延长 QLED 的使用寿命
更新日期:2022-11-06
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2022-11-04 , DOI: 10.1007/s40820-022-00970-x Dong Seob Chung 1 , Tyler Davidson-Hall 1 , Giovanni Cotella 2 , Quan Lyu 2 , Peter Chun 3 , Hany Aziz 1
Affiliation
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Quantum dots light emitting devices (QLEDs) with extremely long half-lifetimes at 100 cd m−2, 2,370,000 h were successfully fabricated using CF4 plasma-treated ZnO nanoparticle electron transport layers.
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A new experimental approach that probes changes in exciton lifetime under current flow was used to investigate the changes in carrier concentration in QLEDs.
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Evidence of the dependence of QLED stability on electron and hole concentrations at the QD/HTL interface was revealed.
中文翻译:
通过在 ZnO 电子传输层中掺入氟来减少界面电荷积累,从而显着延长 QLED 的使用寿命
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使用 CF 4等离子体处理的 ZnO 纳米粒子电子传输层成功制造了在 100 cd m -2下具有 2,370,000 h极长半衰期的量子点发光器件 (QLED) 。
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一种探测电流下激子寿命变化的新实验方法被用于研究 QLED 中载流子浓度的变化。
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揭示了 QLED 稳定性对 QD/HTL 界面处电子和空穴浓度依赖性的证据。