Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer,Nano-Micro Letters

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Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2022-11-04 , DOI: 10.1007/s40820-022-00970-x
Dong Seob Chung ₁ , Tyler Davidson-Hall ₁ , Giovanni Cotella ₂ , Quan Lyu ₂ , Peter Chun ₃ , Hany Aziz ₁

Affiliation

Quantum dots light emitting devices (QLEDs) with extremely long half-lifetimes at 100 cd m⁻², 2,370,000 h were successfully fabricated using CF₄ plasma-treated ZnO nanoparticle electron transport layers.
A new experimental approach that probes changes in exciton lifetime under current flow was used to investigate the changes in carrier concentration in QLEDs.
Evidence of the dependence of QLED stability on electron and hole concentrations at the QD/HTL interface was revealed.

中文翻译：

通过在 ZnO 电子传输层中掺入氟来减少界面电荷积累，从而显着延长 QLED 的使用寿命

_{使用 CF 4}等离子体处理的 ZnO 纳米粒子电子传输层成功制造了在 100 cd m ^-2下具有 2,370,000 h极长半衰期的量子点发光器件 (QLED) 。
一种探测电流下激子寿命变化的新实验方法被用于研究 QLED 中载流子浓度的变化。
揭示了 QLED 稳定性对 QD/HTL 界面处电子和空穴浓度依赖性的证据。

更新日期：2022-11-06

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