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Angular Transmission Response of In-Plane Symmetry-Breaking Quasi-BIC All-Dielectric Metasurfaces
ACS Photonics ( IF 6.5 ) Pub Date : 2022-11-01 , DOI: 10.1021/acsphotonics.2c01069 Nir Levanon 1 , S. R. K. Chaitanya Indukuri 1 , Christian Frydendahl 1 , Jonathan Bar-David 1 , Zhengli Han 1 , Noa Mazurski 1 , Uriel Levy 1
ACS Photonics ( IF 6.5 ) Pub Date : 2022-11-01 , DOI: 10.1021/acsphotonics.2c01069 Nir Levanon 1 , S. R. K. Chaitanya Indukuri 1 , Christian Frydendahl 1 , Jonathan Bar-David 1 , Zhengli Han 1 , Noa Mazurski 1 , Uriel Levy 1
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High-index dielectric metasurfaces have gradually become one of the most promising platforms in the field of nanophotonics due to the ease in engineering their optical behavior and their small size. Several numerical and experimental studies have been conducted in the fields of plasmonic metasurfaces and dielectric metasurfaces on in-plane symmetry-breaking nanodisk metasurfaces supporting high-Q states called “quasi-BICs”, where these devices are useful for applications such as imaging and biodetection. This article studies numerically and experimentally symmetry-breaking metasurfaces made of amorphous silicon (α-Si) nanodisks in the visible-to-near-infrared range. It is reported that the angular response of the quasi-BICs for type I symmetry-breaking metasurfaces can be blue-shifted with respect to incident light tilted parallel to the axis of mirror symmetry and red-shifted when tilted perpendicular to it due to changes in the in-plane momentum. Comparatively, the angular response of the quasi-BICs of type II symmetry-breaking metasurfaces can only be red-shifted due to mirror symmetries in both axis directions.
中文翻译：
面内对称性破缺准 BIC 全电介质超表面的角传输响应
由于易于设计其光学行为和小尺寸，高折射率介电超表面已逐渐成为纳米光子学领域最有前途的平台之一。在支持高Q的面内对称性破缺纳米盘超表面上的等离子体超表面和介电超表面领域，已经进行了几项数值和实验研究称为“准 BIC”的状态，这些设备可用于成像和生物检测等应用。本文在可见到近红外范围内对由非晶硅 (α-Si) 纳米盘制成的对称破缺超表面进行了数值和实验研究。据报道，I 型对称破缺超表面的准 BIC 的角响应可以相对于平行于镜像对称轴倾斜的入射光发生蓝移，而在垂直于它倾斜时由于变化而发生红移面内动量。相比之下，II 型对称破缺超曲面的准 BIC 的角响应只能由于两个轴方向的镜像对称性而发生红移。
更新日期：2022-11-01
中文翻译：
面内对称性破缺准 BIC 全电介质超表面的角传输响应
由于易于设计其光学行为和小尺寸，高折射率介电超表面已逐渐成为纳米光子学领域最有前途的平台之一。在支持高Q的面内对称性破缺纳米盘超表面上的等离子体超表面和介电超表面领域，已经进行了几项数值和实验研究称为“准 BIC”的状态，这些设备可用于成像和生物检测等应用。本文在可见到近红外范围内对由非晶硅 (α-Si) 纳米盘制成的对称破缺超表面进行了数值和实验研究。据报道，I 型对称破缺超表面的准 BIC 的角响应可以相对于平行于镜像对称轴倾斜的入射光发生蓝移，而在垂直于它倾斜时由于变化而发生红移面内动量。相比之下，II 型对称破缺超曲面的准 BIC 的角响应只能由于两个轴方向的镜像对称性而发生红移。
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