GaN-based microdisk laser on Si can be adopted as an efficient on-chip laser source for Si photonics. However, most of the reported microdisk lasers are integrated on Si(111), which is not fully compatible with cost-effective mainstream complementary metal-oxide-semiconductor (CMOS) foundries. In this study, GaN-based microdisk laser monolithically integrated on Si(100) is carefully designed and fabricated thorough wafer bonding and substrate removal. Moreover, it shows 66.5% lower junction temperature due to reduced electric injection power and thermal resistance as compared with the reported conventional GaN-based microdisk lasers grown on Si(111). The result is the room-temperature continuous-wave current-injected lasing of GaN-based microdisk laser on Si(100), showing a narrow spectral line width of about 0.16 nm and an obvious turning point in the optical output power versus injection current curve.

中文翻译：

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Si 上连续波电流注入 InGaN/GaN 微盘激光器 (100)

硅基氮化镓微盘激光器可作为硅光子学的高效片上激光源。然而，大多数报道的微盘激光器都集成在Si(111)上，这与具有成本效益的主流互补金属氧化物半导体(CMOS)代工厂不完全兼容。在这项研究中，单片集成在 Si(100) 上的 GaN 基微盘激光器经过精心设计和制造，彻底进行了晶圆键合和衬底去除。此外，与报道的在 Si(111) 上生长的传统 GaN 基微盘激光器相比，由于电注入功率和热阻降低，结温降低了 66.5%。结果是在 Si(100) 上实现了室温连续波电流注入激光发射，显示出约 0 的窄谱线宽度。