Conjugated polymers are of great interest owing to their potential in stretchable electronics to function under complex deformation conditions. To improve the performance of conjugated polymers, various structural designs have been proposed and these conjugated polymers are specially applied in exotic optoelectronics. In this work, a series of all-conjugated block copolymers (PII2T-b-PNDI2T) comprising poly(isoindigo–bithiophene) (PII2T) and poly(naphthalenediimide–bithiophene) (PNDI2T) are developed with varied compositions and applied to electret-free phototransistor memory. Accordingly, these memory devices present p-type transport capability and electrical-ON/photo-OFF memory behavior. The efficacy of the all-conjugated block copolymer design in improving the memory‒photoresponse properties in phototransistor memory is revealed. By optimizing the composition of the block copolymer, the corresponding device achieves a wide memory window of 36 V and a high memory ratio of 7 × 10⁴. Collectively, the results of this study indicate a new concept for designing electret-free phototransistor memory by using all-conjugated block copolymer heterojunctions to mitigate the phase separation of conjugated polymer blends. Meanwhile, the intrinsic optoelectronic properties of the constituent conjugated polymers can be well-maintained by using an all-conjugated block copolymer design.

中文翻译：

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使用全共轭嵌段共聚物提高无驻极体光电晶体管存储器的性能

共轭聚合物因其在可拉伸电子设备中在复杂变形条件下发挥作用的潜力而备受关注。为了提高共轭聚合物的性能，人们提出了各种结构设计，这些共轭聚合物专门应用于奇特的光电子学领域。在这项工作中，开发了一系列包含聚（异靛蓝-联噻吩）（PII2T）和聚（萘二亚胺-联噻吩）（PNDI2T）的全共轭嵌段共聚物（PII2T- b -PNDI2T），具有不同的组成，并将其应用于无驻极体光电晶体管存储器。因此，这些存储设备呈现p型传输能力和电开/光关记忆行为。揭示了全共轭嵌段共聚物设计在改善光电晶体管存储器中的记忆-光响应特性方面的功效。通过优化嵌段共聚物的组成，相应的器件实现了 36 V 的宽存储窗口和 7 × 10 ⁴的高存储比。总的来说，这项研究的结果表明了一种通过使用全共轭嵌段共聚物异质结来减轻共轭聚合物共混物的相分离来设计无驻极体光电晶体管存储器的新概念。同时，通过使用全共轭嵌段共聚物设计，可以很好地保持组成共轭聚合物的固有光电特性。