This review article discusses the origins of self-assembly behavior of linear and non-linear block co- and terpolymers and their application towards the fabrication of high-resolution patterns for nanolithography applications. Comparative analysis for the microphase separation in bulk and thin films is provided, to map the fundamentals of various types of block copolymers (BCPs) inherent properties prior to their use in advanced applications. The opportunities of high-χ/low-N and/or complex architecture co- and terpolymers to self-assemble into nanostructures that are beyond the limitations of current lithographic techniques will be presented. The role of molecular characteristics and immiscibility of the blocks on the formation of sub-10 nm or sub-5 nm structures will be discussed. Recent advances in directed self-assembly (or DSA) enable low defect density, extremely minimal dimensions, facile processability, etching selectivity, low-cost and ability to design various patterns. The opportunities of these strategies will be discussed in the context of technological standard requirements and their potential will be evaluated.

这篇综述文章讨论了线性和非线性嵌段共聚物和三元共聚物的自组装行为的起源，以及它们在制造用于纳米光刻应用的高分辨率图案中的应用。提供了对块状和薄膜中微相分离的比较分析，以在将各种类型的嵌段共聚物 (BCP) 用于高级应用之前绘制其固有特性的基本原理。将介绍高χ/低氮和/或复杂结构共聚物和三元共聚物自组装成超出当前光刻技术限制的纳米结构的机会。将讨论分子特性和嵌段的不混溶性对亚 10 nm 或亚 5 nm 结构形成的作用。定向自组装（或 DSA）的最新进展使缺陷密度低、尺寸极小、易于加工、蚀刻选择性、低成本和设计各种图案的能力成为可能。这些策略的机会将在技术标准要求的背景下进行讨论，并将评估它们的潜力。