Over 11% Efficient CuGaSe2 Solar Cells Without Using KCN Treatment,Solar RRL

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Over 11% Efficient CuGaSe2 Solar Cells Without Using KCN Treatment
Solar RRL ( IF 6.0 ) Pub Date : 2022-10-18 , DOI: 10.1002/solr.202200766
Junbo Gong ₁ , Duoqi Gao ₁ , Zengyang Ma ₁ , Xuke Yang ₂ , Junjun Zhang ₁ , Xinxing Liu ₁ , Chao Chen ₂ , Jiang Tang ₂ , Bo Da ₃ , Jianmin Li ₁ , Guojia Fang ₁ , Xudong Xiao ₁

Affiliation

CuGaSe₂ (CGS) has a bandgap energy of 1.68 eV and is theoretically very suitable to be in tandem with silicon or Cu(In,Ga)Se₂ solar cells. However, due to the high quantity of surface defects, high-performance CGS usually relies on a KCN surface treatment, which is a high-toxic process and restricts its further development. Herein, by reducing the exposure time to air of the CGS layer as far as possible and developing a new absorber growth procedure to reduce the surface Cu_xSe generation, grain size is successfully increased and interface recombination is reduced without the use of KCN. Combined with a simple annealing process, the defect concentration is successfully decreased and the depletion width is broadened dramatically and the power conversion efficiency is promoted to 11.05% without any traditionally used KCN treatment. This work provides a nontoxic and low-pollution way to fabricate high-efficient CGS solar cells.

中文翻译：

不使用 KCN 处理的效率超过 11% 的 CuGaSe2 太阳能电池

CuGaSe ₂ (CGS)的带隙能量为1.68 eV，理论上非常适合与硅或Cu(In,Ga)Se ₂太阳能电池串联使用。然而，由于表面缺陷较多，高性能CGS通常依赖于KCN表面处理，这是一种高毒性工艺，限制了其进一步发展。在此，通过尽可能减少 CGS 层暴露在空气中的时间，并开发一种新的吸收剂生长程序来减少表面 Cu _x在不使用 KCN 的情况下，Se 生成，晶粒尺寸成功增加，界面复合减少。结合简单的退火工艺，成功降低了缺陷浓度，显着加宽了耗尽宽度，将功率转换效率提升至 11.05%，无需任何传统的 KCN 处理。这项工作为制造高效CGS太阳能电池提供了一种无毒、低污染的方法。

更新日期：2022-10-18

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