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Over 11% Efficient CuGaSe2 Solar Cells Without Using KCN Treatment
Solar RRL ( IF 6.0 ) Pub Date : 2022-10-18 , DOI: 10.1002/solr.202200766
Junbo Gong 1 , Duoqi Gao 1 , Zengyang Ma 1 , Xuke Yang 2 , Junjun Zhang 1 , Xinxing Liu 1 , Chao Chen 2 , Jiang Tang 2 , Bo Da 3 , Jianmin Li 1 , Guojia Fang 1 , Xudong Xiao 1
Affiliation  

CuGaSe2 (CGS) has a bandgap energy of 1.68 eV and is theoretically very suitable to be in tandem with silicon or Cu(In,Ga)Se2 solar cells. However, due to the high quantity of surface defects, high-performance CGS usually relies on a KCN surface treatment, which is a high-toxic process and restricts its further development. Herein, by reducing the exposure time to air of the CGS layer as far as possible and developing a new absorber growth procedure to reduce the surface Cu x Se generation, grain size is successfully increased and interface recombination is reduced without the use of KCN. Combined with a simple annealing process, the defect concentration is successfully decreased and the depletion width is broadened dramatically and the power conversion efficiency is promoted to 11.05% without any traditionally used KCN treatment. This work provides a nontoxic and low-pollution way to fabricate high-efficient CGS solar cells.

中文翻译:

不使用 KCN 处理的效率超过 11% 的 CuGaSe2 太阳能电池

CuGaSe 2 (CGS)的带隙能量为1.68 eV,理论上非常适合与硅或Cu(In,Ga)Se 2太阳能电池串联使用。然而,由于表面缺陷较多,高性能CGS通常依赖于KCN表面处理,这是一种高毒性工艺,限制了其进一步发展。在此,通过尽可能减少 CGS 层暴露在空气中的时间,并开发一种新的吸收剂生长程序来减少表面 Cu x 在不使用 KCN 的情况下,Se 生成,晶粒尺寸成功增加,界面复合减少。结合简单的退火工艺,成功降低了缺陷浓度,显着加宽了耗尽宽度,将功率转换效率提升至 11.05%,无需任何传统的 KCN 处理。这项工作为制造高效CGS太阳能电池提供了一种无毒、低污染的方法。
更新日期:2022-10-18
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