High-density single-walled carbon nanotube (SWNT) arrays with specific diameters are pursued as potential building blocks in future nanoelectronic devices. The direct growth of SWNT arrays on the single-crystal substrate has proved offering densely packing high-quality SWNTs. However, further increase of SWNT density is limited by the deactivation of the catalyst nanoparticles during chemical vapor deposition process. Moreover, an increase of array density without any structure control of SWNTs would make the benefit effect very limited. Here, a temperature-mediated method is proposed to achieve a high-density SWNT array with a specific diameter via continual growth of SWNTs after reactivating poisoned catalysts with high carbon capacity and appropriate size. The density of obtained SWNT array on the quartz substrate is increased by more than three times, with diameter distribution controlled ≈2 nm. This approach paves the way for the integration of SWNTs into nanodevices.

中文翻译：

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通过温度介导的方法提高水平排列的单壁碳纳米管阵列的直径选择性密度

具有特定直径的高密度单壁碳纳米管 (SWNT) 阵列被视为未来纳米电子设备的潜在构建模块。SWNT 阵列在单晶基板上的直接生长已证明可提供密集堆积的高质量 SWNT。然而，单壁碳纳米管密度的进一步增加受到化学气相沉积过程中催化剂纳米颗粒失活的限制。此外，在没有任何单壁碳纳米管结构控制的情况下增加阵列密度会使有益效果非常有限。在这里，提出了一种温度介导的方法，通过在重新激活具有高碳容量和适当尺寸的中毒催化剂后连续生长单壁碳纳米管来实现具有特定直径的高密度单壁碳纳米管阵列。所获得的单壁碳纳米管阵列在石英基板上的密度增加了三倍以上，直径分布控制在≈2 nm。这种方法为将 SWNT 集成到纳米器件中铺平了道路。