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Type-II Heterojunction CdIn2S4/BiVO4 Coupling with CQDs to Improve PEC Water Splitting Performance Synergistically
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-09-30 , DOI: 10.1021/acsami.2c12618 Jiachen Wang 1 , Tingsheng Zhou 1 , Yan Zhang 1 , Lei Li 1 , Changhui Zhou 1 , Jing Bai 1 , Jinhua Li 1 , Hong Zhu 2 , Baoxue Zhou 1, 3
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-09-30 , DOI: 10.1021/acsami.2c12618 Jiachen Wang 1 , Tingsheng Zhou 1 , Yan Zhang 1 , Lei Li 1 , Changhui Zhou 1 , Jing Bai 1 , Jinhua Li 1 , Hong Zhu 2 , Baoxue Zhou 1, 3
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Bismuth vanadate (BiVO4) has been considered as a promising photoelectrocatalytic (PEC) semiconductor, but suffers from severe hole recombination, attributed to the short hole-diffusion length and the low carrier mobility. Herein, a type-II heterojunction CdIn2S4/BiVO4 is designed to improve the photocurrent density from 1.22 (pristine BiVO4) to 2.68 mA cm–2 at 1.23 V vs the reversible hydrogen electrode (RHE), accelerating the bulk separation of photogenerated carriers by the built-in field from the matched energy band. With the introduction of CQDs, CQDs/CdIn2S4/BiVO4 increases the photocurrent density to 4.84 mA cm–2, enhancing the light absorption and cathodically shifting its onset potential, due to the synergetic effect of the heterojunction and CQDs. Compared with BiVO4, CQDs/CdIn2S4/BiVO4 promotes the bulk separation efficiency to 94.6% and the surface injection efficiency to 72.2%. Additionally, spin-coating of FeOOH on CQDs/CdIn2S4/BiVO4 could further improve the PEC performance and keep a long stability for water splitting. The density function theory (DFT) calculations illustrated that the type-II heterojunction CdIn2S4/BiVO4 could decrease the oxygen evolution reaction (OER) overpotential and accelerate bulk charge separation for the built-in field of the aligned band structure.
中文翻译：
II 型异质结 CdIn2S4/BiVO4 与 CQD 耦合协同提高 PEC 水分解性能
钒酸铋（BiVO 4）被认为是一种有前途的光电催化（PEC）半导体，但由于空穴扩散长度短和载流子迁移率低，空穴复合严重。在此，II 型异质结 CdIn 2 S 4 /BiVO 4旨在将光电流密度从 1.22（原始 BiVO 4）提高到 1.23 V 时的 2.68 mA cm –2与可逆氢电极 (RHE) 相比，加速了本体分离来自匹配能带的内建场的光生载流子。随着 CQD、CQD/CdIn 2 S 4 /BiVO 4的引入由于异质结和 CQD 的协同效应，光电流密度增加到 4.84 mA cm -2，增强了光吸收并阴极改变了其起始电位。与BiVO 4相比，CQDs/CdIn 2 S 4 /BiVO 4将本体分离效率提高到94.6%，将表面注入效率提高到72.2%。此外，在CQDs/CdIn 2 S 4 /BiVO 4上旋涂FeOOH可以进一步提高PEC性能并保持长时间的水分解稳定性。密度函数理论（DFT）计算表明，II型异质结CdIn 2 S 4 /BiVO4可以降低析氧反应（OER）过电位并加速对齐能带结构的内建场的体电荷分离。
更新日期：2022-09-30
中文翻译：
II 型异质结 CdIn2S4/BiVO4 与 CQD 耦合协同提高 PEC 水分解性能
钒酸铋（BiVO 4）被认为是一种有前途的光电催化（PEC）半导体，但由于空穴扩散长度短和载流子迁移率低，空穴复合严重。在此，II 型异质结 CdIn 2 S 4 /BiVO 4旨在将光电流密度从 1.22（原始 BiVO 4）提高到 1.23 V 时的 2.68 mA cm –2与可逆氢电极 (RHE) 相比，加速了本体分离来自匹配能带的内建场的光生载流子。随着 CQD、CQD/CdIn 2 S 4 /BiVO 4的引入由于异质结和 CQD 的协同效应，光电流密度增加到 4.84 mA cm -2，增强了光吸收并阴极改变了其起始电位。与BiVO 4相比，CQDs/CdIn 2 S 4 /BiVO 4将本体分离效率提高到94.6%，将表面注入效率提高到72.2%。此外，在CQDs/CdIn 2 S 4 /BiVO 4上旋涂FeOOH可以进一步提高PEC性能并保持长时间的水分解稳定性。密度函数理论（DFT）计算表明，II型异质结CdIn 2 S 4 /BiVO4可以降低析氧反应（OER）过电位并加速对齐能带结构的内建场的体电荷分离。
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