Multi-gate FD-SOI qubit MOS devices were electrically characterized. At deep cryogenic temperatures and in linear regime, oscillations in both the current and the transconductance were observed above threshold. These are likely related to the formation of one-dimensional sub-bands in the silicon active region. A compact model taking into account a 1D density of states (DOS) has been developed in order to fathom how the 1D confinement influences both the inversion charge and the transconductance. The impact of temperature was shown to be crucial in order to distinguish the sub-bands contribution to the transconductance oscillations. Furthermore, the impact of drain voltage was also investigated, showing that the oscillations were smoothed out at high drain biases.

对多栅极 FD-SOI 量子比特 MOS 器件进行了电气表征。在深低温和线性状态下，在阈值以上观察到电流和跨导的振荡。这些可能与硅有源区中一维子带的形成有关。已经开发了一个考虑一维状态密度 (DOS) 的紧凑模型，以了解一维限制如何影响反转电荷和跨导。为了区分子带对跨导振荡的贡献，温度的影响被证明是至关重要的。此外，还研究了漏极电压的影响，表明在高漏极偏压下可以消除振荡。