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Search for sub-GeV dark matter via the Migdal effect with an EDELWEISS germanium detector with NbSi transition-edge sensors
Physical Review D ( IF 4.6 ) Pub Date : 2022-09-29 , DOI: 10.1103/physrevd.106.062004
E. Armengaud , Q. Arnaud , C. Augier , A. Benoît , L. Bergé , J. Billard , A. Broniatowski , P. Camus , A. Cazes , M. Chapellier , F. Charlieux , M. De Jésus , L. Dumoulin , K. Eitel , J.-B. Filippini , D. Filosofov , J. Gascon , A. Giuliani , M. Gros , E. Guy , Y. Jin , A. Juillard , M. Kleifges , H. Lattaud , S. Marnieros , D. Misiak , X.-F. Navick , C. Nones , E. Olivieri , C. Oriol , P. Pari , B. Paul , D. Poda , S. Rozov , T. Salagnac , V. Sanglard , L. Vagneron , E. Yakushev , A. Zolotarova , B. J. Kavanagh ,

The EDELWEISS collaboration reports on the search for dark matter particle interactions via Migdal effect with masses between 32MeV·c2 to 2GeV·c2 using a 200 g cryogenic Ge detector sensitive to simultaneously heat and ionization signals and operated underground at the Laboratoire Souterrain de Modane in France. The phonon signal was read out using a transition edge sensor made of a NbSi thin film. The detector was biased at 66 V in order to benefit from the Neganov-Trofimov-Luke amplification and resulting in a resolution on the energy of electron recoils of 4.46eVee (102.58 eV at 66 V) and an analysis threshold of 30eVee. The sensitivity is limited by a dominant background not associated to charge creation in the detector. The search constrains a new region of parameter space for cross sections down to 1029cm2 and masses between 32 and 100MeV·c2. The achieved low threshold with the NbSi sensor shows the relevance of its use for out-of-equilibrium phonon sensitive devices for low-mass dark matter searches.

中文翻译:

使用带有 NbSi 过渡边缘传感器的 EDELWEISS 锗探测器,通过 Migdal 效应搜索亚 GeV 暗物质

EDELWEISS 合作报告了通过 Migdal 效应与质量之间的暗物质粒子相互作用的搜索32电子伏特·C-22锗钒·C-2使用对同时热和电离信号敏感的 200 g 低温 Ge 探测器,并在法国的 Laboratoire Souterrain de Modane 地下运行。使用由 NbSi 薄膜制成的过渡边缘传感器读出声子信号。检测器偏置为 66 V,以受益于 Neganov-Trofimov-Luke 放大,并导致电子反冲能量的分辨率4.46电子伏特ee(66 V 时为 102.58 eV)和分析阈值30电子伏特ee. 灵敏度受到与探测器中电荷产生无关的主要背景的限制。搜索将横截面的参数空间的新区域限制为10-29厘米2和质量在 32 和之间100电子伏特·C-2. NbSi 传感器实现的低阈值显示了其用于低质量暗物质搜索的失平衡声子敏感设备的相关性。
更新日期:2022-09-29
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