The self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFETs brings challenges to the measurement and modeling of transient electrothermal characteristics. For the first time, this study obtains the transient two-stage thermal equivalent RC network of SOI MOSFETs by nano double-pulse measurement combined with network identification by a deconvolution (NID) method. The two-stage model provides a comprehensive reference for the accumulation of residual heat under dynamic operation. We reveal that since the oxide layer acts as a thermal reservoir, the heat dissipation process can be divided into three phases according to thermal time constants. The results of geometry dependence of thermal parameters show that the gate length and width-to-length ratio ( W/L{W}/{L} ) increase: the thermal resistance trend of both stages decreases, the one-stage thermal time constant increases, but the two-stage thermal time constant decreases. Also, as the scaling of device dimension and mutual thermal coupling, the thermal transient response boosts significantly.

中文翻译：

---

使用纳米双脉冲测量研究 SOI-MOSFET 瞬态两级热等效 RC 网络


绝缘体上硅 (SOI) MOSFET 的自热效应 (SHE) 给瞬态电热特性的测量和建模带来了挑战。该研究首次通过纳米双脉冲测量结合反卷积（NID）方法的网络识别获得了SOI MOSFET的瞬态两级热等效RC网络。两阶段模型为动态运行下的余热积累提供了综合参考。我们发现，由于氧化物层充当热库，因此根据热时间常数，散热过程可以分为三个阶段。热参数几何依赖性的结果表明，栅极长度和宽长比（W/L{W}/{L}）增加：两级热阻趋势减小，一级热时间常数增加，但两级热时间常数减小。此外，随着器件尺寸的缩小和相互热耦合，热瞬态响应显着增强。