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Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform
IEEE Transactions on Electron Devices ( IF 2.9 ) Pub Date : 9-1-2022 , DOI: 10.1109/ted.2022.3200638
Seong Hyun Lee 1 , Sang Hoon Kim 1 , Sungyeop Jung 2 , Jeong Woo Park 1 , Tae Moon Roh 1 , Wangjoo Lee 1 , Dongwoo Suh 1
Affiliation  

We developed a novel technique, selective epitaxial lateral overgrowth (ELO), to fabricate a local but sufficiently large silicon-on-insulator (SOI) platform on conventional silicon wafers. Based on high-level crystallinity of the local SOI, we implemented reconfigurable FETs with three gates. These FETs demonstrate n- and p-type behavior depending on the applied bias. Not only the reconfigurable FETs but also their logic gates (inverter and NAND) delivered sound performance. Using a compact model based on the surface potential of the channel, we derived the key parameters of the proposed reconfigurable FET and used the model to explain the peculiarities in its working behavior. Owing to the unique advantages of a local SOI, reconfigurable FETs can be seamlessly incorporated into a silicon platform as a building block for CMOS-SOI hybrid electronics.

中文翻译:


在外延横向过度生长硅平台上演示可重构 FET 和逻辑门



我们开发了一种新技术,选择性外延横向过度生长(ELO),在传统硅晶圆上制造局部但足够大的绝缘体上硅(SOI)平台。基于局部 SOI 的高水平结晶度,我们实现了具有三个栅极的可重构 FET。这些 FET 根据所施加的偏压表现出 n 型和 p 型行为。不仅可重新配置 FET,它们的逻辑门(反相器和 NAND)也提供了良好的性能。使用基于通道表面电势的紧凑模型,我们推导了所提出的可重构 FET 的关键参数,并使用该模型来解释其工作行为的特殊性。由于局部 SOI 的独特优势,可重构 FET 可以无缝集成到硅平台中,作为 CMOS-SOI 混合电子器件的构建块。
更新日期:2024-08-26
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