The modified thermal device model was adapted to determine the channel temperature of the AlGaN/GaN HEMT operating under pulsed and quasi-static conditions. The differential analysis of the isothermal and thermal part of the resulting current, as well as ambient temperature variation, is utilized to determine the average channel temperature. Ambient temperature increases in the device operating range is required under low-power operation only, while under high-power operation the thermal stress of the device is significantly reduced due to small ambient temperature variation. In addition, trapping phenomena incorporation is demonstrated to obtain more accurate results utilizing the HEMT threshold voltage shift and transconductance. For experimental verification of the thermal model, Al0.25Ga0.75N/GaN HEMT electrical properties are investigated. Experimentally verified results are in a good agreement with numerical simulations.

中文翻译：

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利用低功耗器件操作确定 HEMT 平均温度


修改后的热器件模型适用于确定在脉冲和准静态条件下工作的 AlGaN/GaN HEMT 的沟道温度。利用对所得电流的等温部分和热部分以及环境温度变化的差分分析来确定平均通道温度。仅在低功率运行时才需要提高器件工作范围内的环境温度，而在高功率运行时，由于环境温度变化较小，器件的热应力显着降低。此外，还证明了捕获现象的结合可以利用 HEMT 阈值电压偏移和跨导获得更准确的结果。为了对热模型进行实验验证，研究了 Al0.25Ga0.75N/GaN HEMT 的电性能。实验验证的结果与数值模拟吻合良好。