InGaZnO (IGZO) thin-film transistors (TFTs) with NdHfO gate dielectric have been fabricated with different gate-dielectric annealing temperatures (room temperature, 50 °C, 100 °C, 150 °C, 200 °C, 400 °C, and 800 °C) in order to investigate the influence of remote phonon scattering (RPS) generated by the atomic vibration of the gate dielectric on the carrier mobility in the neighboring IGZO channel. Surprisingly, despite having the best gate-dielectric quality, the sample with the highest annealing temperature of 800 °C has the lowest carrier mobility. The reason should lie in its thickest interlayer grown between the gate dielectric and the gate electrode, which results in the largest separation between the gate-electrode holes and the gate-dielectric dipoles and, thus, the weakest screening effect of the former on the RPS on the charge carriers in the IGZO channel.

中文翻译：

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栅介质退火温度对 InGaZnO 薄膜晶体管中远程声子散射屏蔽的影响

具有 NdHfO 栅极电介质的 InGaZnO (IGZO) 薄膜晶体管 (TFT) 已在不同的栅极电介质退火温度（室温、50°C、100°C、150°C、200°C、400°C 和800°C），以研究由栅极电介质的原子振动产生的远程声子散射（RPS）对相邻IGZO通道中载流子迁移率的影响。令人惊讶的是，尽管具有最佳的栅极介电质量，但退火温度最高为 800 °C 的样品具有最低的载流子迁移率。原因应该在于它在栅介质和栅电极之间生长的最厚的中间层，这导致栅电极孔和栅介质偶极子之间的分离最大，因此，