InGaZnO (IGZO) thin-film transistors (TFTs) with NdHfO gate dielectric have been fabricated with different gate-dielectric annealing temperatures (room temperature, 50 °C, 100 °C, 150 °C, 200 °C, 400 °C, and 800 °C) in order to investigate the influence of remote phonon scattering (RPS) generated by the atomic vibration of the gate dielectric on the carrier mobility in the neighboring IGZO channel. Surprisingly, despite having the best gate-dielectric quality, the sample with the highest annealing temperature of 800 °C has the lowest carrier mobility. The reason should lie in its thickest interlayer grown between the gate dielectric and the gate electrode, which results in the largest separation between the gate-electrode holes and the gate-dielectric dipoles and, thus, the weakest screening effect of the former on the RPS on the charge carriers in the IGZO channel.

中文翻译：

---

栅介质退火温度对 InGaZnO 薄膜晶体管远程声子散射屏蔽的影响


采用不同栅极电介质退火温度（室温、50°C、100°C、150°C、200°C、400°C 和800 °C），以研究栅极电介质原子振动产生的远程声子散射（RPS）对邻近 IGZO 沟道中载流子迁移率的影响。令人惊讶的是，尽管具有最好的栅极介电质量，但最高退火温度为 800 °C 的样品却具有最低的载流子迁移率。原因应该在于栅介质和栅电极之间生长的最厚的中间层，导致栅电极孔和栅介质偶极子之间的间隔最大，因此前者对RPS的屏蔽作用最弱IGZO 通道中的电荷载流子。