We developed an integrated dual-gate-driving thin-film transistor (TFT)-based compensation pixel circuit for active matrix organic light-emitting diode (AMOLED) displays to overcome the limitations of conventional pixel circuits that synchronize in only one direction. Our pixel circuit based on amorphous indium–gallium–zinc–tin oxide TFTs (a-IGZTO TFTs) utilizes selectively synchronized (SLT-Sync) dual-gate-driving TFTs to compensate for threshold voltage ( ${V}_{{\mathrm {th}}}$ ) variations and extend the input data range for precise control of emission current. We performed simulations to verify circuit performance and fabricated new and comparable pixel circuits to evaluate the simulation result. The new pixel circuit operates as a gate-synchronized (G-Sync) dual-gate TFT compensating for ${V}_{{\mathrm {th}}}$ variation, enabling more accurate and rapid sensing than a source-synchronized (S-Sync) dual-gate TFT. The field-effect mobility ( $\mu _{{\mathrm {FET}}}$ ) of the new pixel was 1.4-fold than that of the latter dual-gate TFTs operating mode, and the emission current error rate on ${V}_{{\mathrm {th}}}$ variation (±0.5 V) was < 5.0%. The new pixel circuit behaved as an S-Sync dual-gate TFT during emission. The input data range is about 0.6 V greater than that of a G-Sync dual-gate TFT, due to the twofold increase in subthreshold swing (SS). Therefore, the new pixel circuit optimally balances fast ${V}_{{\mathrm {th}}}$ compensation and input data range expansion, and will find applications in high-resolution AMOLED displays by applying the SLT-Sync dual-gate TFTs, which operate in G-Sync and S-Sync modes as needed.

中文翻译：

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一种用于 AMOLED 显示器的具有选择性同步双栅极 IGZTO TFT 的新型像素电路

我们开发了一种用于有源矩阵有机发光二极管 (AMOLED) 显示器的基于集成双栅极驱动薄膜晶体管 (TFT) 的补偿像素电路，以克服仅在一个方向上同步的传统像素电路的局限性。我们基于非晶铟-镓-锌-氧化锡TFT（a-IGZTO TFT）的像素电路利用选择性同步（SLT-Sync）双栅极驱动TFT来补偿阈值电压（ ${V}_{{\mathrm {th}}}$ ) 变化并扩展输入数据范围，以精确控制发射电流。我们进行了模拟以验证电路性能，并制造了新的和可比较的像素电路来评估模拟结果。新的像素电路作为栅极同步 (G-Sync) 双栅极 TFT 补偿 ${V}_{{\mathrm {th}}}$变化，实现比源同步 (S-Sync) 双栅极 TFT 更准确和快速的感测。场效应迁移率 ( $\mu _{{\mathrm {FET}}}$ ) 比后者双栅 TFT 工作模式的 1.4 倍，并且发射电流错误率 ${V}_{{\mathrm {th}}}$变化 (±0.5 V) < 5.0%。新的像素电路在发射过程中表现为 S-Sync 双栅极 TFT。由于亚阈值摆幅 (SS) 增加了两倍，因此输入数据范围比 G-Sync 双栅极 TFT 大约 0.6 V。因此，新的像素电路可以快速实现最佳平衡 ${V}_{{\mathrm {th}}}$补偿和输入数据范围扩展，并将通过应用 SLT-Sync 双栅极 TFT（根据需要在 G-Sync 和 S-Sync 模式下运行）在高分辨率 AMOLED 显示器中找到应用。