Robust reliability is essential for electronic devices against inductive transient shocks in power switching applications. In this work, rugged surge current tolerance and transient energy sustaining capability are simultaneously demonstrated in AlGaN/GaN Schottky barrier diodes (SBDs) for the first time, which greatly fills the research gap toward the device reliability requirements for inductive switching applications. Such robustness is attributed to the combined advantages of the uniquely designed buried-ohmic anode structure and efficient thermal management enabled by substrate thinning and flip-chip packaging techniques. The resultant device exhibits a high surge current density of 3.4 kA/cm2 (42 A) and a critical transient dissipating energy density of 1.5 J/cm2 (18.6 mJ). All these values are the highest reported in AlGaN/GaN SBDs. In particular, the superior switching performance with nanosecond reverse recovery time is achieved under a 400-V operating condition with a fast di/dt of 200 A/ μs\mu \text{s} , implying the desired functionality of the proposed device architecture. This work, thus, makes a significant step in reaching the promise of AlGaN/GaN SBDs for high-reliability and high-power applications.

中文翻译：

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采用埋欧姆阳极结构的倒装芯片 AlGaN/GaN 肖特基势垒二极管，具有强大的浪涌电流耐用性和瞬态能量维持能力


强大的可靠性对于电子设备抵御电源开关应用中的感应瞬态冲击至关重要。在这项工作中，首次在AlGaN/GaN肖特基势垒二极管（SBD）中同时展示了坚固的浪涌电流耐受能力和瞬态能量维持能力，这极大地填补了电感开关应用器件可靠性要求的研究空白。这种鲁棒性归功于独特设计的埋入式欧姆阳极结构和通过基板减薄和倒装芯片封装技术实现的高效热管理的综合优势。所得器件具有 3.4 kA/cm2 (42 A) 的高浪涌电流密度和 1.5 J/cm2 (18.6 mJ) 的临界瞬态耗散能量密度。所有这些值都是 AlGaN/GaN SBD 中报道的最高值。特别是，在 400V 工作条件下实现了具有纳秒级反向恢复时间的卓越开关性能，快速 di/dt 为 200A/μs\mu\text{s}，这意味着所提出的器件架构具有所需的功能。因此，这项工作在实现 AlGaN/GaN SBD 用于高可靠性和高功率应用的承诺方面迈出了重要一步。