In this article, we investigate Schottky diodes with pure W and W-C alloy metal electrodes. The electrical characteristics of samples were analyzed by comparing the current density–voltage ( J−V{J} - {V} ) and capacitance–voltage ( C−V{C} - {V} ) curves at different annealing temperatures from 400 °C to 900 °C. The ideality factor of W-C alloy diodes annealed at 400 °C was 1.162. When W-C alloy diodes were annealed at 500 °C–900 °C, the range of ∅I−VB\emptyset _{B}^{I-{V}} was merely 0.08 eV, the ideality factors were below 1.15, and the difference between ∅I−VB\emptyset _{B}^{I-{V}} and ∅C−VB\emptyset _{B}^{C-{V}} was smaller compared to the pure W diodes. For W-C alloy diodes annealed at 500 °C, the barrier height fluctuated only slightly, and the leakage current was suppressed effectively as the operating temperature increased. These results show that the new structure has better electrical characteristics and thermal stability. Meanwhile, transmission electron microscope (TEM) and energy-dispersive X-ray (EDX) images also verify that W-C alloy diodes reduce the interface reaction between the metal and silicon carbide (SiC), which improves the barrier inhomogeneity of W-based Schottky diodes effectively.

中文翻译：

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4H-SiC 二极管用 WC 合金肖特基接触件的性能评估


在本文中，我们研究了具有纯 W 和 WC 合金金属电极的肖特基二极管。通过比较400°以上不同退火温度下的电流密度-电压(J−V{J} - {V})和电容-电压(C−V{C} - {V})曲线来分析样品的电特性C至900°C。 400°C 退火的 WC 合金二极管的理想因子为 1.162。当WC合金二极管在500℃~900℃退火时，∅I−VB\emptyset_{B}^{I-{V}}的范围仅为0.08 eV，理想因子低于1.15，并且与纯 W 二极管相比，∅I−VB\emptyset _{B}^{I-{V}} 和 ∅C−VB\emptyset _{B}^{C-{V}} 之间的差异较小。对于500℃退火的WC合金二极管，势垒高度波动很小，并且随着工作温度的升高，漏电流得到有效抑制。这些结果表明新结构具有更好的电特性和热稳定性。同时，透射电子显微镜（TEM）和能量色散X射线（EDX）图像也验证了WC合金二极管减少了金属与碳化硅（SiC）之间的界面反应，从而改善了W基肖特基二极管的势垒不均匀性有效地。