The field plate (FP) is a widely adopted concept and has been commonly used for high-voltage (HV) transistors to increase the breakdown voltage without enlarging the device dimension. In this article, a 2-D mathematical equation is derived for the FP design of HV transistors which reveals the potential and the electric field distributions in the reduced-surface field (RESURF) region. From the derived mathematical model, the mechanism of the FP-induced electric field suppression for the HV transistors is completely explained as the FP can reduce the potential gradient ( E=−∇φ{E} = -\nabla \varphi ) caused by the dielectric thickness differences above the RESURF region. The potential and the electric field distributions of the RESURF region will change as the FP is inserted due to the dielectric thickness variations. The derived equations also explained the capacitive behaviors and quantitatively described the potential and electric field distributions in different configurations of the FP-assisted RESURF devices. The results obtained by the derived equation are found to be very much accurate compared with technology computer-aided design (TCAD) simulation results.

中文翻译：

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高压晶体管场板设计的二维模型


场板（FP）是一个广泛采用的概念，通常用于高压（HV）晶体管，以在不增大器件尺寸的情况下提高击穿电压。在本文中，推导了高压晶体管 FP 设计的二维数学方程，该方程揭示了减面场 (RESURF) 区域中的电势和电场分布。从推导的数学模型可以完整地解释 FP 对高压晶体管引起的电场抑制的机制，因为 FP 可以减小由RESURF 区域上方的电介质厚度差异。由于电介质厚度的变化，当插入 FP 时，RESURF 区域的电势和电场分布将发生变化。导出的方程还解释了电容行为，并定量描述了 FP 辅助 RESURF 器件不同配置中的电势和电场分布。与技术计算机辅助设计（TCAD）模拟结果相比，推导方程获得的结果非常准确。