The oscillation phenomenon of trench-type insulated gate bipolar transistors during short-circuit (SC) type II was investigated experimentally and theoretically. The gate resistance required to suppress oscillations decreased with an increasing collector voltage. The oscillation conditions were calculated from the signal flow graph model using the S{S} -parameter based on a technology computer-aided design simulation. The calculation results reproduced the locus of the collector voltage dependence of the experimentally measured gate resistance. The oscillation mechanism was investigated using the device simulation. The response of carrier density modulation at the base-drift layer boundary was found to transmit to the collector side through the electron–hole plasma region during the oscillation, indicating that the transfer characteristics of the carrier density modulation in the drift region at the specific collector voltage influence the collector voltage dependence of the SC oscillation. The influence of circuit parameters on the oscillation was also investigated. An increase in the emitter inductance suppressed the oscillations, whereas an increase in gate inductance increases oscillations.

中文翻译：

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使用基于 TCAD 的信号流图模型对 II 型短路期间沟槽 IGBT 的寄生振荡进行分析


对沟槽型绝缘栅双极晶体管在II型短路(SC)期间的振荡现象进行了实验和理论研究。抑制振荡所需的栅极电阻随着集电极电压的增加而降低。振荡条件是使用基于计算机辅助设计模拟技术的 S{S} 参数从信号流图模型计算得出的。计算结果再现了实验测量的栅极电阻的集电极电压依赖性轨迹。使用装置模拟研究了振荡机制。发现基极-漂移层边界处的载流子密度调制响应在振荡过程中通过电子空穴等离子体区传输到集电极侧，表明特定集电极处漂移区载流子密度调制的传输特性电压影响 SC 振荡的集电极电压依赖性。还研究了电路参数对振荡的影响。发射极电感的增加抑制了振荡，而栅极电感的增加则增加了振荡。