This article demonstrates the fabrication and characterization of a low-cost, energy-efficient, easy-to-fabricate SnS/MXene memristor in which an SnS/Ti3C2Tx active layer is sandwiched in between two copper electrodes. The device has been showing substantial merits with an experimental Roff{R}_{\text{off}} : Ron{R}_{\text{on}} ratio of ~22 with good cyclic stability, exceptional reproducibility, and data retention capability up to 1000 cycles. This article explains the detailed physics governing the various regions of the proposed memristor characteristics in terms of the dual ionic conduction mechanism. Furthermore, the article explains the memristor’s asymmetric behavior using the concept of the trapping and de-trapping of charge carriers. Real-time band structures extracted using sophisticated ultraviolet photoelectron spectroscopy (UPS) strongly support the claims reported in this article. Finally, this article concludes with a practical application of the fabricated device as a low-cost, tunable asymmetric clock generator circuit.

中文翻译：

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二维 SnS/MXene 纳米混合不对称忆阻器的演示


本文演示了低成本、节能、易于制造的 SnS/MXene 忆阻器的制造和表征，其中 SnS/Ti3C2TX 有源层夹在两个铜电极之间。该器件已显示出巨大的优点，实验性 Roff{R}_{\text{off}} : Ron{R}_{\text{on}} 比率约为 22，具有良好的循环稳定性、出色的再现性和数据保留能力能力高达 1000 次循环。本文根据双离子传导机制解释了控制所提出的忆阻器特性的各个区域的详细物理原理。此外，本文还利用电荷载流子的捕获和去捕获概念解释了忆阻器的不对称行为。使用先进的紫外光电子能谱 (UPS) 提取的实时能带结构有力地支持了本文中报道的主张。最后，本文总结了所制造器件作为低成本、可调谐非对称时钟发生器电路的实际应用。