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Polymer-derived β-SiAlON:Eu2+ phosphors
International Journal of Applied Ceramic Technology ( IF 2.1 ) Pub Date : 2022-09-26 , DOI: 10.1111/ijac.14228
Yang Gao 1 , Junya Iihama 1 , Daiki Hamana 1 , Ryo Iwasaki 1 , Sawao Honda 1 , Toru Asaka 1 , Munni Kumari 2 , Tomokatsu Hayakawa 1 , Samuel Bernard 2 , Philippe Thomas 2 , Yuji Iwamoto 1
Affiliation  

A series of β-SiAlON:Eu2+ phosphors were synthesized from single-source precursors, perhydropolysilazane chemically modified with Al(OCH(CH3)2)3, AlCl3, and EuCl2. The single-source precursors were converted to β-SiAlON:Eu2+ phosphors by pyrolysis under flowing N2 or NH3 at 1000°C, followed by heat treatment at 1800°C under an N2 gas pressure at 980 kPa. By varying the molar ratio of the chemical modifiers, β-SiAlON:Eu2+ with the compositions close to the theoretical ones expressed as Si6−zAlzOz−2yN8−z+2y:yEu2+ were synthesized, where the z values and Eu2+ contents were controlled in the ranges of .44–.78 and .35–1.48 mol%, respectively. The polymer-derived β-SiAlON:Eu2+ phosphors exhibited green emission under excitation at 460 nm attributed to the 4f7–4f6(7f3)5d1 transition of dopant Eu2+. High-angle annular dark-field-scanning transmission microscopy analysis confirmed that the doped-Eu2+ existed interstitially within the channels along the c axis of host β-SiAlON. Compared with the conventional powder metallurgy route, the polymer-derived ceramic route in this study offers some advantages in the grain growth of host β-SiAlON and photoluminescence properties in terms of green emission intensity under excitation at 460 nm, and the highest intensity was achieved for the polymer-derived β-SiAlON:Eu2+ with z = .64 and .37 mol% Eu2+.

中文翻译:

聚合物衍生的 β-SiAlON:Eu2+ 荧光粉

一系列β-SiAlON:Eu 2+荧光粉由单源前体、用Al(OCH(CH 3 ) 2 ) 3、AlCl 3和EuCl 2化学改性的全氢聚硅氮烷合成。通过在 1000°C 的流动 N 2或 NH 3下热解,然后在 980 kPa 的 N 2气压下在 1800°C 下进行热处理,将单源前体转化为 β-SiAlON:Eu 2+磷光体。通过改变化学改性剂的摩尔比,β-SiAlON:Eu 2+的组成接近理论组成,表示为 Si 6−z Al z O z −2 y N 8− z +2 y : y Eu 2+被合成,其中z值和 Eu 2+含量控制在 .44–.78 和 .35–1.48 mol% 的范围内, 分别。聚合物衍生的 β-SiAlON:Eu 2+荧光粉在 460 nm 激发下表现出绿色发射,这归因于掺杂剂 Eu 2+的 4f 7 –4f 6 (7f 3 )5d 1跃迁。高角度环形暗场扫描透射显微镜分析证实掺杂的 Eu 2+沿宿主 β-SiAlON 的c轴间隙存在于通道内。与传统的粉末冶金路线相比,本研究中的聚合物衍生陶瓷路线在 460 nm 激发下的绿色发射强度方面,在主体 β-SiAlON 的晶粒生长和光致发光性能方面具有一些优势,并且达到了最高强度对于聚合物衍生的 β-SiAlON:Eu 2+,其中z  = .64 和 .37 mol% Eu 2+
更新日期:2022-09-26
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