4H-silicon carbide metal-oxide-semiconductor field-effect transistors (4H-SiC MOSFETs) show 1/f low-frequency noise behavior. In this paper, this can be explained by the combination of the mobility fluctuation (Δμ) and the carrier number fluctuation (ΔN) theories. The Δμ theory believes that LFN is generated by the bulk defects, while the ΔN theory holds that LFN originates from the extraordinarily high oxide traps. For 4H-SiC MOSFETs, significant subthreshold noise will appear when only the ΔN theory attempts to model LFN in the subthreshold region. Therefore, we account for the high density of bulk defects (Δμ theory) and characterize the subthreshold noise. The theoretical model allows us to determine the bulk density of the trap states. The proposed LFN model is applicable to SiC MOSFETs and accurately describes the noise experimental data over a wide range of operation regions.

中文翻译：

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4H-SiC 金属氧化物半导体场效应晶体管的低频噪声建模

4H-碳化硅金属氧化物半导体场效应晶体管 (4H-SiC MOSFET) 表现出 1/ f低频噪声行为。在本文中，这可以通过迁移率波动（Δ μ）和载流子数波动（Δ N）理论的组合来解释。Δμ理论认为LFN是由体缺陷产生的，而ΔN理论认为LFN源于异常高的氧化物陷阱。对于 4H-SiC MOSFET，当仅 ΔN 理论试图在亚阈值区域模拟 LFN 时，会出现明显的亚阈值噪声。因此，我们考虑了体积缺陷的高密度（Δ μ理论）并表征亚阈值噪声。理论模型使我们能够确定陷阱态的体积密度。所提出的 LFN 模型适用于 SiC MOSFET，并准确描述了广泛工作区域内的噪声实验数据。