This paper proposes an experimental method devoted at characterizing the maximum continuous drain-source current sustainable by a power semiconductor device. This information, strictly related to thermal limit of the package, is being more and more important, especially for automotive applications, where the robustness must be assured, in terms of reliability. More specifically, usually it is demanded a high value of current which the device must be handled. The test vehicle used in this work is the low-voltage LFPAK package, based on a silicon MOSFET. Moreover, a finite element based model is developed in order to numerically reproduce the experiment: in this way, it is possible to study the system in a more detailed manner, and changes in device's and cooling system's designs can be quickly evaluated.

本文提出了一种实验方法，专门用于表征功率半导体器件可持续的最大连续漏源电流。该信息与封装的热限制严格相关，变得越来越重要，特别是对于必须确保可靠性方面的稳健性的汽车应用。更具体地说，通常需要设备必须处理的高电流值。这项工作中使用的测试工具是基于硅 MOSFET 的低压 LFPAK 封装。此外，开发了一个基于有限元的模型，以便对实验进行数值再现：通过这种方式，可以更详细地研究系统，并且可以快速评估设备和冷却系统设计的变化。