The reliability of power modules plays a crucial role in developing safer and smarter generations of electric vehicles. Condition monitoring represents a possible solution to predict the possible occurrence of catastrophic failures and avoid unexpected breakdowns. More specifically, power modules for inverter applications are a technology requiring condition monitoring indicators to detect ongoing degradation mechanisms. In this work, both silicon IGBT and silicon carbide MOSFET power modules are thermally stressed through the application of a pulsed direct current until reaching end-of-life limits. As a result, two main failure mechanisms occurring at package level are observed: chip solder degradation and bond-wire damages. In addition, on-state voltage, junction temperature, and thermal resistance are measured during the power cycling as parameters to monitor the device states of health. After the test, the chip solder conditions and bond-wires robustness are checked through scanning acoustic microscope images and optical inspections, respectively. The novelty of this work lies in refining and comparing health indicators for silicon and silicon carbide power modules.

电源模块的可靠性在开发更安全、更智能的电动汽车方面发挥着至关重要的作用。状态监测代表了一种可能的解决方案，可以预测可能发生的灾难性故障并避免意外故障。更具体地说，用于逆变器应用的功率模块是一种需要状态监测指示器来检测正在进行的退化机制的技术。在这项工作中，硅 IGBT 和碳化硅 MOSFET 功率模块都通过施加脉冲直流电流受到热应力，直至达到使用寿命终止极限。因此，观察到封装级发生的两种主要故障机制：芯片焊料退化和键合线损坏。此外，通态电压，结温，在电源循环期间测量热阻和热阻作为参数以监控设备的健康状态。测试后，分别通过扫描声学显微镜图像和光学检查来检查芯片焊接条件和键合线的稳健性。这项工作的新颖之处在于提炼和比较硅和碳化硅功率模块的健康指标。